INHIBITORY ACTION OF Si ON GROWTH OF INTERFACIAL COMPOUND LAYER DURING HOT－DIP ALUMINIZING

Acta Metall Sin

1994, Vol. 30

Issue (21): 403-406 DOI:

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INHIBITORY ACTION OF Si ON GROWTH OF INTERFACIAL COMPOUND LAYER DURING HOT－DIP ALUMINIZING

QIAN Weijiang;GU Wengui(Shanghai Iron and Steel Research Institute)

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QIAN Weijiang;GU Wengui(Shanghai Iron and Steel Research Institute). INHIBITORY ACTION OF Si ON GROWTH OF INTERFACIAL COMPOUND LAYER DURING HOT－DIP ALUMINIZING. Acta Metall Sin, 1994, 30(21): 403-406.

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Abstract Investigation was made of the structure and composition of the interfacial compound layer of hot-dip aluminized 08F steel strip influenced by an addition of 2 at.－%Si to the hot-dipping bath.Results show that Si enriches the interfacial layer to form compound Fe_2(AlSi)_5.The inhibitory action of Si on the growth of interfacial compound layer may be to fill the vacant sites in Fe_2Al_5, to retard the diffusion of Al and then to reduce the thickness of the layer.

Key words: hot-dip aluminizing interfacial compound diffusion Fe_2Al_5 Si

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y1994/V30/I21/403

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