Mechanisms of Interfacial Reaction and Matrix Phase Transition in SiCf /Ti65 Composites
WANG Chao1,2, ZHANG Xu1(), WANG Yumin1(), YANG Qing1, YANG Lina1, ZHANG Guoxing1, WU Ying1, KONG Xu1, YANG Rui1
1 Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China 2 School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
Cite this article:
WANG Chao, ZHANG Xu, WANG Yumin, YANG Qing, YANG Lina, ZHANG Guoxing, WU Ying, KONG Xu, YANG Rui. Mechanisms of Interfacial Reaction and Matrix Phase Transition in SiCf /Ti65 Composites. Acta Metall Sin, 2020, 56(9): 1275-1285.
Continuous silicon carbide (SiC) ?ber-reinforced titanium metal-matrix composites (TMCs) are potential candidates for high temperature application in jet engines because of their high specific strength and stiffness. However, severe interfacial reactions caused by high temperature manufacture and service have a detrimental effect on the mechanical properties of composites. Furthermore, the phase transition occurred in matrix at elevated temperature is unfavorable to the properties. In this work, the interfacial reaction, matrix phase transformation and thermal stability of SiCf /Ti65 composites were investigated. The composites were prepared by the combination of magnetron sputtering and hot isostatic pressing (HIP) method. Matrix-coated precursor wires prepared by sputtering were aligned, degased and encapsulated, then consolidated by HIP. And the densified composites were subjected to long-term thermal exposure at 650, 750, 800 and 900 ℃, respectively. Reaction products and element diffusion of SiCf /Ti65 composites in different conditions were studied. The results show that the elements diffuse and participate in both interfacial reaction and matrix phase transition during HIP and thermal exposure process. In the as-processed SiCf /Ti65 composites, TiC is the main product of interfacial reaction layer, and (Zr, Nb)5Si4 is the product of matrix phase transition. With the continuous consumption of C-coating layer in the process of thermal exposure, Ti5Si3 and (Zr, Nb)5Si4 form in the interfacial reaction layer, while Ti3(Al, Sn)C and TiC precipitate in the matrix. The results of thermal stability study indicate a parabolic correlation between interfacial reaction layer thickness and exposure time, and the activation energy of reaction layer growth estimated by Arrhenius equation is 93 kJ/mol. The interface of SiCf /Ti65 composites is stable below 650 ℃.
Fig.1 Cross section SEM image of the as-processed SiCf/Ti65 composites
Fig.2 Low magnified cross section BS-SEM image (a) and high magnified cross section SEM image (b) of the as-processed SiCf /Ti65 composites
Fig.3 SEM image and EDS elemental mapping in the fiber/matrix interfacial reaction zone for the as-processed SiCf /Ti65 composites
Fig.4 XRD spectra of the as-processed SiCf /Ti65 composites
Fig.5 TEM image of the interfacial reaction zone for the as-processed SiCf /Ti65 sample (a) and the SAED patterns corresponding to zones b~i in Fig.5a (b~i), respectively
Fig.6 SEM images of the interfacial reaction layer and matrix for SiCf /Ti65 composites under different thermal exposure conditions
Fig.7 SEM image and EDS elemental mapping in the fiber/matrix interfacial reaction zone for SiCf /Ti65 composites exposed at 900 ℃ and 200 h
Fig.8 XRD spectra of SiCf /Ti65 composites under different thermal exposure conditions
Fig.9 TEM image of the interfacial reaction zone for the SiCf /Ti65 composite after 900 ℃ and 200 h thermal exposure (a) and the SAED patterns corresponding to zones b~g in Fig.9a (b~g), respectively
Fig.10 Schematics of distributions of interfacial reaction products and element diffusion paths (shown by arrows) for SiCf /Ti65 composites
Fig.11 SEM images of the interfacial reaction layer for SiCf/Ti65 composites under different thermal exposure conditions
Temperature / ℃
5 h
15 h
30 h
50 h
100 h
150 h
200 h
650
-
-
-
0.80
0.81
0.81
0.81
750
-
-
-
0.91
0.98
1.03
1.08
800
-
-
-
1.21
1.38
1.51
1.58
900
0.97
1.12
1.31
1.51
2.50
3.37
3.99
Table 1 Thicknesses of interfacial reaction layer for SiCf /Ti65 composites under different thermal exposure conditions
Fig.13 Arrhenius plot of the interfacial reaction layer growth in SiCf /Ti65 composites (k—rate constant, T—thermal exposure temperature)
Material
k0 / (m·s-1/2)
Q / (kJ·mol-1)
SiCf /TC17[28]
4.64×10-3
138
SiCf /Ti60[31]
2.27×10-4
118
SiCf /Ti65
2.37×10-5
93
Table 2 Frequency factors (k0) and growth activation energies (Q)for different materials
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