ATOMISTIC SIMULATIONS OF BAUSCHINGER EFFECT IN NANOCRYSTALLINE ALUMINUM THIN FILMS
LI Xiaoyan1,2()
1 School of Engineering, Brown University, Providence, RI 02912, USA 2 Centre for Advanced Mechanics and Materials, AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084
Cite this article:
LI Xiaoyan. ATOMISTIC SIMULATIONS OF BAUSCHINGER EFFECT IN NANOCRYSTALLINE ALUMINUM THIN FILMS. Acta Metall Sin, 2014, 50(2): 219-225.
The early Bauschinger effect in nanocrystalline Al thin films with different thicknesses and microstructural orientations was investigated using large-scale atomistic simulations. The simulation results indicate that the microstructural orientation heterogeneity has a significant influence on the early Bauschinger effect and the associated plastic deformation mechanisms. The (110)-textured thin films show less Bauschinger effect compared to non-textured films despite having the same grain size, shape and thickness. The atomistic simulations reveal that the early Bauschinger effect originates from the reverse motion of dislocations and the reduction in dislocation density due to dislocation reactions during unloading, which are driven by the internal residual stress caused by the inhomogeneous deformation during loading.