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| Calculation on Deposited Temperature During Pulsed Bias Arc Ion Plating |
| BAI Xiao; LIN Guoqiang; DONG Chuang; WEN Lishi |
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Cite this article:
BAI Xiao; LIN Guoqiang; DONG Chuang; WEN Lishi. Calculation on Deposited Temperature During Pulsed Bias Arc Ion Plating. Acta Metall Sin, 2004, 40(10): 1069-1073 .
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Abstract The influencing factors and their weights on deposited
temperature have been studied in detail during pulsed bias arc
ion plating (PBAIP). Based on the model of deposited temperature
calculation in arc ion plating (AIP), and under the condition
of the rectangle substrate voltage waveforms, the input power
intensity of ion bombardment in PBAIP can be equal to the product
of the input power in AIP and duty cycle in PBAIP. On the basis of energy
conversation principle, a substrate temperature calculation model
for PBAIP is established when the bias voltage varies from -1000 V
to 0. Experiments are also used to verify the calculated results and
a good agreement is obtained.
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Received: 10 October 2003
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