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AMORPHIZATION OF SURFACE OXIDIZED LAYER OF SiC IN SiC_p/AlCOMPOSITE |
MEI Zhi;GU Mingyuan;WU Renjie (State Key Laboratory of Metal Matrix Composites; Shanghai Jiaotong University;Shanghai 200030) |
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Cite this article:
MEI Zhi;GU Mingyuan;WU Renjie (State Key Laboratory of Metal Matrix Composites; Shanghai Jiaotong University;Shanghai 200030). AMORPHIZATION OF SURFACE OXIDIZED LAYER OF SiC IN SiC_p/AlCOMPOSITE. Acta Metall Sin, 1997, 33(5): 557-560.
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Abstract The structures of SiO2 surface layer on the oxidized silicon carbide particles before and after compositing with aluminum matrix were studied by XRD and TEM. It is shown that the SiO, layer is crystalline when silicon carbide particles are oxidized at 1100℃ in air. It will be amorphized under the irradiation of high energy electron beam after being composited with aluminum matrix. The amorphization mechanism of the SiO2 layer was also discussed.
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Received: 18 May 1997
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1梅志,顾明元,蒋为吉,吴人洁.上海交通大学学报,1996;30(suppl):116 2Jorgenson P J,Wadsworh M E,Cutler I B.J Am Ceram Soc,1959;42:613 3 Sen S,Dhindaw B K,Stefanescu D M.Mater Sci Eng,1994;A174:207 4李建平,赵玉厚,董晟全,汤谨.西安工业学院学报,1993;13(2):79 5 Jonhson W L.Prog Mater Sci,1986;30:81 6 Ratnaparkhi P L,Howe J M.Acta Metall Mater,1994;42:811, |
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