NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35wt-%Si ALLOY SURFACE

Acta Metall Sin

1992, Vol. 28

Issue (9): 63-66 DOI:

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NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35wt-%Si ALLOY SURFACE

CHEN Ning; YU Zongsen (University of Science and Technology Beijing)

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CHEN Ning; YU Zongsen (University of Science and Technology Beijing). NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35wt-%Si ALLOY SURFACE. Acta Metall Sin, 1992, 28(9): 63-66.

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Abstract Si segregation was observed in the vacancy condensation pits, formed by supersaturated vacancies below the oxidation layer of Al—0.35 wt-%Si alloy, by optical microscopy, X-ray photoeletron spectroscopy and microhardness test. This phenomenon could only be explained by diffusion of vacancy-Si complex inducing non-equilibrium segregation.

Key words: non-equilibrium segregation vacancy Al-Si alloy surface

Received: 18 September 1992

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