集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升

doi:10.11900/0412.1961.2024.00290

金属学报

2025, Vol. 61

Issue (7): 979-997 DOI: 10.11900/0412.1961.2024.00290

综述

本期目录 | 过刊浏览

集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升

黄明亮(

), 王胜博, 尤海潮, 刘厚麟, 任婧, 黄斐斐

大连理工大学材料科学与工程学院电子封装材料实验室大连 116024

Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement

HUANG Mingliang(

), WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei

Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

引用本文:

黄明亮, 王胜博, 尤海潮, 刘厚麟, 任婧, 黄斐斐. 集成电路芯片锡基微凸点电迁移：从物理本质到可靠性提升[J]. 金属学报, 2025, 61(7): 979-997.
Mingliang HUANG, Shengbo WANG, Haichao YOU, Houlin LIU, Jing REN, Feifei HUANG. Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement[J]. Acta Metall Sin, 2025, 61(7): 979-997.

全文: PDF(3511 KB) HTML

摘要:

随着先进封装技术向微型化、高性能方向发展，集成电路芯片锡基微凸点的直径持续减小至微米尺度，通过单个凸点的电流密度随直径减小呈平方增加，其电迁移行为与机理研究对集成电路芯片互连可靠性评估与设计具有重要价值。本文归纳分析了芯片互连微凸点(焊点)电迁移现象的物理本质、主要影响因素和研究方法；系统综述了微焊点固-固电迁移过程中的极性效应、反极性效应和两相分离等电迁移行为特征与液-固电迁移过程中原子迁移、相析出和相溶解等电迁移行为特征；梳理评价了电迁移寿命的评估模型及修正模型；最后阐明了微焊点电迁移可靠性提升的方法，并展望了集成电路芯片互连锡基微凸点电迁移未来的研究方向和可靠性分析方法。

关键词 ：电子封装, 芯片互连, 锡基微凸点, 电迁移, 可靠性

Abstract：

With advancements in miniaturization and performance in advanced packaging technology, the diameter of Sn-based microbumps continues to shrink to the micrometer scale. Consequently, the current density passing through each solder bump increases exponentially as the radius reduces. This emphasizes the critical need to understand the behaviors and mechanisms of electromigration (EM) for the reliability evaluation and design of chip interconnects in integrated circuits. This study systematically summarizes and analyzes the physical nature, key influencing factors and research methods related to the electromigration of Sn-based microbumps. The EM characteristics during the solid-solid EM, including the polarity effect, reverse polarity effect and two-phase separation are reviewed. Similarly, the EM behaviors during the liquid-solid EM, including atomic migration, phase segregation, and phase dissolution, are systematically reviewed. The EM lifetime assessment models and their modifications are evaluated. Furthermore, this study summarizes methods to improve the EM reliability of Sn-based microbumps and outlines prospective research directions and analytical approaches to further improve their reliability in advanced electronic applications.

Key words： electronic packaging chip interconnection Sn-based microbump electromigration reliability

收稿日期: 2024-08-20

ZTFLH:

TN405

基金资助:国家自然科学基金项目(52350321);国家自然科学基金项目(U1837208);中国博士后科学基金项目(2024M750313)

通讯作者: 黄明亮，huang@dlut.edu.cn，主要从事先进封装微互连技术研究

作者简介: 黄明亮，男，1970年生，博士，教授

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https://www.ams.org.cn/CN/10.11900/0412.1961.2024.00290 或 https://www.ams.org.cn/CN/Y2025/V61/I7/979

表1 β-Sn各向异性参数

图1 β-Sn晶粒的各向异性对微焊点电迁移失效模式的影响[22]

图2 电迁移作用下微凸点中β-Sn晶粒的旋转滑移[23]

图3 β-Sn晶粒各向异性对电迁移过程中金属间化合物(IMC)生长的影响[24]

图4 电迁移导致的微焊点微观组织演变：阴极侧裂纹[37]和阳极侧“小丘”[22]

图5 同步辐射技术原位实时表征Cu/Sn-9%Zn/Cu微焊点液-固电迁移中发生的反极性效应[14]

图6 同步辐射技术原位实时表征Sn-58%Bi钎料焊点液-固电迁移中Bi原子的定向迁移[18]

图7 基于液-固电迁移“极性效应”提出的电流驱动键合方法[49]

图8 凸点下金属化层(UBM)组合方式对微焊点电迁移可靠性的影响[88]

图9 通过Sn在单晶IMC片上形核凝固调控β-Sn晶粒取向[95]

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