抗辐照损伤金属基纳米结构材料界面设计及其响应行为的研究进展

doi:10.11900/0412.1961.2020.00169

金属学报

2021, Vol. 57

Issue (2): 150-170 DOI: 10.11900/0412.1961.2020.00169

综述

本期目录 | 过刊浏览

抗辐照损伤金属基纳米结构材料界面设计及其响应行为的研究进展

刘悦¹(

), 汤鹏正¹, 杨昆明¹, 沈一鸣², 吴中光², 范同祥¹(

)

^1.上海交通大学金属基复合材料国家重点实验室上海 200240
^2.上海航天技术研究院上海 201109

Research Progress on the Interface Design and Interface Response of Irradiation Resistant Metal-Based Nanostructured Materials

LIU Yue¹(

), TANG Pengzheng¹, YANG Kunming¹, SHEN Yiming², WU Zhongguang², FAN Tongxiang¹(

)

^1.State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China
^2.Shanghai Academy of Spaceflight Technology, Shanghai 201109, China

引用本文:

刘悦, 汤鹏正, 杨昆明, 沈一鸣, 吴中光, 范同祥. 抗辐照损伤金属基纳米结构材料界面设计及其响应行为的研究进展[J]. 金属学报, 2021, 57(2): 150-170.
Yue LIU, Pengzheng TANG, Kunming YANG, Yiming SHEN, Zhongguang WU, Tongxiang FAN. Research Progress on the Interface Design and Interface Response of Irradiation Resistant Metal-Based Nanostructured Materials[J]. Acta Metall Sin, 2021, 57(2): 150-170.

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摘要:

在高能粒子辐照条件下，金属基结构材料内部会出现不同类型的缺陷，这些辐照诱导缺陷的大规模聚集会造成损伤，降低材料的结构稳定性，从而严重影响结构材料的力学和物理性能。通过材料设计的手段引入界面充当缺陷陷阱，可通过对辐照诱导缺陷的分离、吸收和湮灭，有效减轻材料的辐照损伤。纳米结构材料由于含有高密度界面，其辐照损伤行为的研究于近20年快速发展，且界面能被证实是影响界面调控辐照损伤的重要因素。本文聚焦金属基纳米结构材料，围绕界面设计，详细阐述了低能和高能界面设计下，不同结构类型的界面对辐照损伤的影响及界面响应行为的研究进展，为进一步实现界面结构优化，平衡界面能、界面结构稳定性及良好辐照抗性之间的关系提供理论基础和科学依据。最后，基于前述界面设计的思想，总结了近年来发展的碳/金属界面设计及抗辐照损伤的研究进展，展望了未来先进抗辐照金属基纳米结构材料的设计和发展。

关键词 ：辐照损伤, 金属基纳米结构材料, 界面结构设计, 界面响应行为, 碳/金属界面

Abstract：

High-energy particle irradiation can often cause microstructure damage, resulting in different types of defects in metal-based structured materials. These irradiation-induced defects can accumulate and evolve, leading to the deformation and reduction of the structural integrity of the materials. Finally, this causes the degradation of the mechanical and physical properties of the aforementioned materials. These defects can be shielded, absorbed, and annihilated by introducing interfaces in materials, alleviating the radiation damage. In the previous two decades, metal-based nanostructured materials have attracted considerable attention in designing irradiation-resistant materials because of its high density of internal interfaces. This review aims to investigate the effect of the interface microstructure and energy on strengthening the irradiation resistance of metal-based nanostructured materials, with special emphasis on the interface responses of low- and high-energy interfaces. Furthermore, this review provides the theoretical and scientific foundation for optimizing the interface structure design and exhibits delicate balance between the interface microstructure, interface energy, interface stability, and irradiation resistance. In addition, the recent research progress on irradiation-resistant carbon-/metal-based nanostructured materials that consider such interface characteristics is reviewed in detail. Finally, the prospect of future irradiation-resistant metal-based nanostructured material development is discussed.

Key words： radiation damage metal-based nanostructured materials interface microstructural design interface response behavior carbon/metal interface

收稿日期: 2020-05-21

ZTFLH:

TB331

基金资助:国家自然基金项目(51901129);国家重点研发计划项目(2017YFB0703101)

作者简介: 刘悦，1986年生，男，副教授，博士

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图1 共格孪晶界设计及其对辐照损伤的响应行为[14,26~28,31](a) cavity formation near the GB triple-junction[14](b) cavities near the twin boundary with its corresponding selected area electron diffraction (SAED) pattern[14](c, d) atomistic images showing a dumbbell crossing a CTB during equilibration after radiation cascade[28](e1-e7) in situ snapshots and schematics of distortion and self-healing of CTBs[26](f1-f6) schematics illustrate the capturing of defect clusters by CTBs and their self-healing mechanism(g) the interaction of lattice glide dislocation with a CTB, forming defective CTB[31](h) defective CTBs prevailing in deformed nanotwinned Cu structure. Some selected kinks are marked with white arrows. The portion of CTBs marked with an X is perfect TBs without defects[27]

图2 共格异质界面设计及其对辐照损伤的响应行为[32,34]

图3 非共格孪晶界设计及其对辐照损伤的响应行为[37,38](a-c) in situ snapshots showing the migration and absorption of defect clusters by an ITB at the dose of about 0.85 dpa[37] (d-g) absorption and diffusion of interstitials in nanovoid-nanotwinned (nv-nt) Cu[38] (d) fast interstitial diffusion pipes enabled by incoherent twin boundary (ITB)-CTB networks in nanotwinned Cu (e) two fast diffusion channels at ITBs (Ef, Em—formation and migration energies, respectively) (f, g) the corresponding diffusion mechanisms (h-m) snapshots recorded during in situ irradiation in TEM and corresponding schematics showing the continuous evolution of twin boundaries over a dose range of 0.766-0.898 dpa[37] (n, o) schematics of ITB migration mechanisms during irradiation[37]

图4 密度泛函理论计算Fe原子掺杂后非共格孪晶界的稳定性[43](a-e) configurations of Fe impurities in Ag at interstitial and substitutional sites at different locations used for DFT simulations(f) creation of an intrinsic stacking fault in Ag with and without Fe substitutional atom (via shear displacement) showing the increase of the stable stacking fault energy by 12 mJ/m2, and the increase of unstable stacking fault energy by about 5 mJ/m2(g) comparison of migration energy barrier for a coherent twin boundary with and without the Fe substitutional atom showing an increase of energy barrier by about 6 mJ/m2 with Fe substitutional atom at the original twin boundary

图5 大角度晶界设计及界面与缺陷的相互作用[8,13,51](a) defects near a triple junction in polycrystalline Cu irradiated at 450oC by 200 keV He ions with fluence of 2×1017 ions/cm2 (The inset is the corresponding electron backscatter diffraction (EBSD) image)[13](b) the determination of void-denuded zones (VDZ) for one grain boundary (GB) with 49°. All images were taken under a defocus of -5 μm[13] (λ—VDZ width)(c) VDZ width as a function of misorientation for non-CTB ∑3 and ∑3 GBs[13] (d-k) in situ evidence of absorption of individual loops or a dislocation segment by GBs of nanocrystalline Ni[51] (l-q) selected snapshots of damage self-healing near the GB from temperature accelerated dynamics (TAD) simulations. The symbols are defined as follows: larger green spheres, interstitials; red cubes, vacancies; smaller blue spheres, atoms that move more than 1 nm during an event (between the frames immediately before and after); purple vectors, the moving directions and distances of moving atoms (Ea—activation barriers)[8] (l) after 21.3 ns, the five vacancies below the GB form a cluster (m, n) at 23.0 ns, three interstitials emit from the GB with a barrier of 0.17 eV to annihilate three vacancies. Note that Fig.5m shows how atoms move during this transition, and Fig.5n shows the final configuration after the event is completed (o, p) configurations before and after the last interstitial emission event at 23.8 ns (q) at 348.0 ns, the two vacancies above the GB diffuse to the GB via the slower conventional hopping mechanism

图6 纳米晶304奥氏体不锈钢掺杂La元素后的原子探针和透射电镜表征[58](b) a bright-field TEM image and corresponding APT Si atom map of a thin slice (5?nm in thickness) reconstructed volume, with 14 resolved nanograins marked as 1-14, respectively and GBs decorated with La-rich nanoprecipitates (NPs). 1D composition profiles across GB5–6, GB6–7, and GB7–8, as marked by green arrows in the Si map, showing the segregation of Si, La, and O at GBs(c) a top magnified combined atom map of Si and La from a small reconstructed region with GBs decorated with La-rich NPs, a bottom combined Fe, Si, and La map of a small framed region of a grain containing a La-rich NP defined by iso-surfaces of 2.5%La (atomic fraction) and fine La-rich clusters. The right proxigrams from La-rich NPs in different sizes reveal their compositions of La-rich NPs at GBs and in grain interiors. The particle size (d) of NPs is defined as the equivalent spherical diameter

图7 半共格异质界面与辐照缺陷的相互作用[10,63,68](a-d) in situ observation of dislocation loops absorbed by layer interface over a dose range of 0.131-0.133 dpa (0.262×1014-0.266×1014 ions/cm2)[10](e) schematic of interaction between two coaxial dislocation loops with opposite Burgers vectors[10] (f-h) simulations of 1.5 keV collision cascades in Cu/Nb multilayer composite (f), perfect crystalline fcc copper (g), and perfect crystalline bcc niobium (h)[63] (i, j) interface stress enhancing the sink strength of layer interfaces: Migration paths and local concentrations of vacancies (i) and interstitials (j) on the Ag side of the semi-coherent Ag-Cu interface[68] (k, l) enhancement in sink strength of semi-coherent Ag-Cu interfaces for vacancies (k) and interstitials (l) in Cu are plotted as functions of layer thickness (kv2 and ki2 are the sink strengths for vacancies and interstitials, respectively, d1—layer thickness)[68]

图8 半共格异质界面失配位错序列设计[74,78](a, b) the MDIs in Cu/Nb and Cu/V interfaces (The dashed lines indicate interface misfit dislocations)[74](c) the black dots present the areal densities of MDIs calculated by O-lattice theory for a range of fcc/bcc pairs with different lattice parameter ratios, but identical interface crystallography (Kurdjumov-Sachs orientation relation and closest-packed interface planes); the red diamonds are critical He concentrations measured to detect He bubbles in TEM; and the dashed line is a visual guide[74] (d-i) plan-view images of He channels[78] (d-g) underfocused plan-view TEM micrographs (400-nm underfocus) of the V/Cu/V trilayer after He implantation to fluences of 1×1015 ions/cm2 (d), 3×1015 ions/cm2 (e), 5×1015 ions/cm2 (f), and 1×1016 ions/cm2 (g) (h, i) an isolated precipitate from a sample implanted to 3×1015 ions/cm2 appears bright in underfocus (h) and dark in overfocus (i) imaging conditions (400-nm overfocus), confirming that it is an elongated, He filled cavity

图9 碳纳米管/金属界面抗辐照响应行为研究[79,81](a-d) SEM images of highly porous control Al (a) and Al+1%CNT (volume fraction) (b), and indented area observations on control Al (c) and Al+CNT composites (d)[79](e) schematic of shape changes on CNT, recombination, and helium out-gas[79] (f-h) molecular dynamics (MD) simulation snapshots (Ni: small red dots, C: small black spheres, He: blue spheres)[81] (f) at t=0, when Ni/C atoms are replaced at random by He (g) evolution 0.05 ns later (h) 1.0 ns later. In Figs.9g and h, He atoms are diffusing along the interior and exterior walls of the CNT, far from the CNT center. When no CNT wall defects are included He atoms diffuse only along the CNT external wall

图10 石墨烯/金属界面抗辐照响应行为研究[82~84](a) TEM image of as-deposited W nanofilm irradiated by 50 keV He+ ions to a total influence of 1×1017 ions/cm2 [82](b) TEM image of peak He concentration region under 50 keV He+ irradiation in W15/Gr to a total influence of 5×1016 ions/cm2[82](c) schematic of the experimental setup for characterizing the thermal resistance[82] (d, e) SEM images of nanopillars after compression testing for He+ irradiated pure V (d) and V-graphene with 110 nm repeat layer spacing indicating that the crack propagation was suppressed by the graphene interface (e)[83] (f) schematic of simulation[83] (g) damage on graphene after the knock-on event[83] (h) the collision cascade after the knock-on event for d=1.5 nm. The amount of cascade is significantly reduced by the graphene layer. Significantly more defects remain in the pure V. Atoms with high potential energy (above -4.4 eV) are visualized selectively[83] (i) the formation energies of vacancies are significantly lower at the graphene interface than that in the bulk lattice of V[83] (j) number of surviving defects in the bulk region, generated by a 3 keV primary knock-on atom (PKA) away from the interface about 1.54 nm, as a function of temperature[84] (k) effects of the displacement cascades generated by a 100 keV PKA on the different layers of graphene of Gr/Cu nanolayered composites, viewed in the z-direction[84]

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