Acta Metall Sin  2008, Vol. 44 Issue (10): 1265-1270     DOI:

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INFLUENCE OF DOPING LEVEL ON MECHANICAL PROPERTIES OF ZNO-BASED COMPOSITE VARISTORS

PENG Zhi-Jian;Yiyong Yang;Chengbiao Wang;Zhiqiang Fu;Hezhuo Miao;Ludwig Gauckler

中国地质大学（北京）

PENG Zhi-Jian; Yiyong Yang; Chengbiao Wang; Zhiqiang Fu; Hezhuo Miao; Ludwig Gauckler. INFLUENCE OF DOPING LEVEL ON MECHANICAL PROPERTIES OF ZNO-BASED COMPOSITE VARISTORS. Acta Metall Sin, 2008, 44(10): 1265-1270 .

Abstract References Related Articles Recommended Metrics Download:  PDF(2006KB)  Export:  BibTeX | EndNote (RIS)       Abstract  Three series of ZnO-based varistor materials with different doping levels of antimony and bismuth were prepared, and their mechanical properties were investigated, respectively. Under constant amount of bismuth of 2 at%, with increasing amount of antimony in an appropriate range, the decreasing grain size of ZnO, almost unchanged porosity, and increasing relative density resulted in increase in the modulus, bending strength and fracture toughness. Under constant amount of antimony of 3 at%, with increasing amount of bismuth, the grain size and porosity increased, thus the relative density would decrease although the apparent density might increase. The resultant modulus, bending strength and fracture toughness all decreased. The optimum ZnO-based varistor material in this work had mechanical properties of elastic modulus of 114 GPa, flexure modulus of 115 GPa, bending strength of more than 120 MPa, and fracture toughness of higher than 1.87 MPa.m-1/2. Key words:  ZnO      Dopants      Composite ceramic varistors      Mechanical properties       Received:  18 February 2008      ZTFLH:  TG304.055   Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors PENG Zhi-Jian Yiyong Yang Chengbiao Wang Zhiqiang Fu Hezhuo Miao Ludwig Gauckler URL:  https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y2008/V44/I10/1265 [1]Gupta T K.J Am Ceram Soc,1990;73:1817 [2]Levinson L M,Philipp H R.Am Ceram Soc Bull,1986; 65:639 [3]Einzinger R.Annu Rev Mater Sci,1987;17:299 [4]Clarke D R.J Am Ceram Soc,1999;82:485 [5]Matsuoka M.Jpn J Appl Phys,1971;10:736 [6]Park J S,Han Y H,Choi K H.J Mater Sci,2005;16:215 [7]Pfeiffer H,Knowles K M.J Eur Ceram Soc,2004;24:1199 [8]Anastasiou A,Lee M H J,Leach C,Freer R.J Eur Ceram Soc,2004;24:1171 [9]Chen C S.J Mater Sci.2003;38:1033 [10]Ott J,Lorenz A,Harrer M,Preissner E A,Hesse C,Feltz A,Whitehead A H,Schreiber M.J Electroceram.2001;6: 135 [11]Kutty T R N,Raghu N.Appl Phys Lett,1989;54:1796 [12]Akbar M,Ahmad M.Electr Power Systems Res,1999;50: 79 [13]Ramirez M A,Bueno P R,Ribeiro W C,Varela J A, Bonett D A,Villa J M,Marquez M A,Rojo C R.J Mater Sci,2005;40:5591 [14]Balzer B,Hagemeister M,Kocher P,Gauckler L J.J Am Ceram Soc,2004;87:1932 [15]Begum S,Hashmi M S J.J Mater Process Technol,2005; 167:542 [16]Ferraris M,VernéE.J Eur Ceram Soc,1996;16:421 [17]Peng Z J,Wang C B,Gauckler L J,Miao H Z.Key Eng Mater,2008;368-372:479 [18]Wong J.J Appl Phys,1975;46:1653 [19]Olsson E,Falk L K L,Dunlop G L,Sterlund R O.J Mater Sci,1985;20:4091 [1] Guanglu MA, Xinyu CUI, Yanfang SHEN, CINCA Nuria, M. 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