Abstract Cu-In films with chemical composition ratio of 1∶1 are deposited on
stainless steel and Mo-coated glass substrate under constant current
with Ti worked as anode. The Cu-In precursor film with the thickness
of 1 um is uniform and compact. The influences of deposition
parameters such as the electrolyte contents, current density, the type
and concentration of complexing agent, $etc.$, on films composition and
morphology were studied. Those parameters with the exception of current
density are allowed to be same when different kinds of substrates are
employed. Current plays an important role in affecting the property of
precursor films. If the ratio of Cu 2+ to In 3+ is constant,
the total concentration of ions showed inappreciable influence on film
morphology. The result shows that lauryl sodium sulfate and sodium
benzenesulfinate as ideal additives can make the films more flat and
smooth. The Cu-In films prepared by such method provide a good
foundation for further selenization process obtaining CuInSe 2 film.
[1] Bekker J, Alberts V, Witcomb M J. Thin Solid Films, 2001; 387: 40 [2] Powalla M, Dimmler B. Solar Energy Mater Solar Cells, 2003; 75: 27 [3] Wada T, Hashimoto Y, Nishiwaki S, Satoh T, Hayashi S, Negami T, Miyake H. Solar Energy Mater Solar Cells, 2001; 67: 305 [4] Yuksel O F, Baso B M, Safak H, Karabiyik H. Appl Phys, 2001; 73A: 387 [5] Kenji Y, Daisuke M, Tetsuo I. Appl Phys Lett, 2000; 77: 259 [6] Hagiwara Y, Nakada T, Kunioka A. Solar Energy Mater Solar Cells, 2001; 67: 267 [7] Wijesundera R P, Siripala W. Solar Energy Mater Solar Cells, 2004; 81: 147 [8] Nakamura S, Yamamoto A. Solar Energy Mater Solar Cells, 2003; 75: 81 [9] Ugarte R, Schrebler R, Cordova R, Dalchiele E A, Gomez H. Thin Solid Films, 1999; 340: 117
