HU Dongfang; HUANG Hanquan (Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015); HUANG Jianyu (Laboratory of Atomic Imaging of Solids; Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015).XIA Fei (Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015)
Cite this article:
HU Dongfang; HUANG Hanquan (Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015); HUANG Jianyu (Laboratory of Atomic Imaging of Solids; Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015).XIA Fei (Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015). INTERFACE FEATURE OF RB-SiC/MOSi_2 COMPOSITE. Acta Metall Sin, 1995, 31(15): 135-138.
Abstract The RB-SiC/MoSi_2 composite was prepared by infiltration of Mo-Si melt, foaming MoSi_2 as a secondary phase, instead of residual Si in order to prevent the damage over 1400 ℃. Observations under SEM, TEM and HREM on the interface feature of the RB-SiC/MoSi_2 composite had shown that the uniform and continous network distributed along SiC grain boundaries. the thickness was about 5nm. The interface was composed of t-MoSi_2 and β-SiC, two-phase overlapped each other. Neither reaction layer nor amorphous matter was observed.