Domain switching and indentation crack propagating in BaTiO3 single crystal induced by etching

Acta Metall Sin

2005, Vol. 41

Issue (3): 297-301 DOI:

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Domain switching and indentation crack propagating in BaTiO3 single crystal induced by etching

WANG Ruimin; CHU Wuyang; SU Yanjing; GAO Kewei; QIAO Lijie

Department of Materials Physics; University of Science & Technology Beijing; Beijing 100083

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WANG Ruimin; CHU Wuyang; SU Yanjing; GAO Kewei; QIAO Lijie. Domain switching and indentation crack propagating in BaTiO3 single crystal induced by etching. Acta Metall Sin, 2005, 41(3): 297-301 .

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Abstract Etching-enhanced 90º domain switching and indentation crack propagating in BaTiO3 single crystal have been investigated using poled and unpoled samples, respectively. The results show that if the poled direction [001] lies in the (100) indentation plane, etching in HCl+HF solution causes the average length of 16 indentation cracks to increase from (140±17)μm to (211±26)μm, i.e., 50% increment. At the same time, the 90º domain switching zones surrounded by the indentation cracks increase also evidently after etching. The reason is due to chemisorption of etching molecular decreasing surface energy. If Vicker's indention is carried out in the pre-etched surface, the average crack length and the size of the domain switching zones are the same with those of etching after indentation. If the [001] poling direction is normal to the indentation plane, there is no effect of etching on the domain switching zone and crack length. For unpoled sample, etching increases the domain switching zone and the crack length from (150±21) μm to (182±30) μm, i.e., about 20% increment.

Key words: BaTiO3 single crystal etching domain switching

Received: 05 April 2004

ZTFLH:	TG111.91
	TG172.5

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	WANG Ruimin
	CHU Wuyang
	SU Yanjing
	GAO Kewei
	QIAO Lijie

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y2005/V41/I3/297

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