GROWTH OF SILICON IN UNDERCOOLED Al50Si50 ALLOY MELT

Acta Metall Sin

2004, Vol. 40

Issue (7): 683-688 DOI:

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GROWTH OF SILICON IN UNDERCOOLED Al50Si50 ALLOY MELT

GE Lili; LIU Riping; WANG Qiang; WANG Wenkui

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GE Lili; LIU Riping; WANG Qiang; WANG Wenkui. GROWTH OF SILICON IN UNDERCOOLED Al50Si50 ALLOY MELT. Acta Metall Sin, 2004, 40(7): 683-688 .

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Abstract Undercooled solidification of Al50Si50 (atomic fraction) melt is achieved by repeatedly heating and cooling in electromagnetic levitation facility. A maximum undercooling of 320 K is obtained. Phase morphologies on surfaces and deeply etched sections of the samples solidified at different undercoolings are examined. The primary silicon shows faceted dendrites with stratified deposits of aluminum at small undercooling, but shows granular form without deposits of aluminum at large undercooling. The form of the Al--Si eutectic is also found changed into anomalous form at large undercoolings. The microstructural refinement is observed at large undercooling, as a result of solute restriction of crystal growth and fragmentation of the primary silicon dendrites.

Key words: solidification of undercooled melt Al-Si alloy

Received: 10 July 2003

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