Acta Metall Sin  1989, Vol. 25 Issue (2): 89-94    DOI:

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THREE-DIMENSIONAL MATHEMATICAL MODELING OF TRANSPORT PROCESSES IN CVD REACTORS

HE Youduo;Y. SAHAI Baotou Institute of Iron and Steel Technology The Ohio State University; USA

HE Youduo;Y. SAHAI Baotou Institute of Iron and Steel Technology The Ohio State University; USA. THREE-DIMENSIONAL MATHEMATICAL MODELING OF TRANSPORT PROCESSES IN CVD REACTORS. Acta Metall Sin, 1989, 25(2): 89-94.

Abstract References Related Articles Recommended Metrics Download:  PDF(510KB)  Export:  BibTeX | EndNote (RIS)       Abstract  A mathematical model to represent the fluid flow, temperature distri-bution and mass transfer in CVD reactors has been developed. The model is usedto predict the velocity, temperature, and molar concentration profiles in the taper-ed annulus of a reactor for silicon deposition from SiCl_4 in H_2. Results of theinvestigation contribute to the understanding of the transport processes involved insuch a system. The model can also be used for optimizing the design parameters,such as inlet flow rate, susceptor tilt angle, etc. Key words:  reactor of chemical vapor deposition      velocity field      temperature field      rate of Si deposition      Received:  18 February 1989      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y1989/V25/I2/89 1 Eversteijn F C, Severin P J W, Van Den Brekel C H J, Peek H L. J Electrochem Soc, 1970; 117: 925 2 Eversteijn F C, Peek H L. Philips Res Rep, 1970; 25: 472 3 Ban V S, Gilbert S L. J Cryst Growth, 1975; 31: 284 4 Ban V S. J Cryst Growth, 1978; 45: 97 5 Rundle P C. Int J Electron, 1968; 24: 405 6 Rundle P C. J Cryst Growth, 1971; 11: 6 7 Takahashi R, Koga Y, Sugawara K. J Electrochem Soc, 1972; 119: 1406 8 Fujii E, Nakamura H, Hariuma K, Koga Y. J Electrochem Soc, 1972; 119: 1106 9 Manke C W, Donaghey L F. 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