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Acta Metall Sin  2011, Vol. 47 Issue (1): 109-114    DOI: 10.3724/SP.J.1037.2010.00370
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PREPARATION OF Na1.4Co2O4 BASED THERMOELECTRIC MATERIALS BY SOL-GEL METHOD AND CHARACTERIZATION
LI Ying, MA Beiyue, WANG Zhenming, JIANG Maofa
School of Materials and Metallurgy, Northeastern University, Shenyang 110819
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LI Ying MA Beiyue WANG Zhenming JIANG Maofa. PREPARATION OF Na1.4Co2O4 BASED THERMOELECTRIC MATERIALS BY SOL-GEL METHOD AND CHARACTERIZATION. Acta Metall Sin, 2011, 47(1): 109-114.

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Abstract  Sr, Li and Cu-doped Na1.4Co2O4 based thermoelectric materials were prepared by sol-gel process. The phase constitution of Na1.4Co2O4 based thermoelectric materials was analyzed by XRD. According to DTA-TG curves, the pre-sintering and sintering temperatures of the materials were obtained to be 450 ℃ and 850 ℃, respectively. The influences of doping amount on the electrical resistivity, Seebeck coefficient and power factor of Na1.4Co2O4 based materials were investigated. The results showed that doping Li could decrease the electrical resistivity of Na1.4Co2O4, doping Sr and Cu could increase the electrical resistivity. Doping Li and Cu could improve the Seebeck coefficient and power factor of Na1.4Co2O4. The improving effect on Na1.4Co2O4 by doping Sr is not remarkable but by doping Li is the best. When 0.40 Li was doped, the power factor of Na1.0Li0.4Co2O4 at 15 ℃ reaches maximum value of 7444.73 μW?m-1?K-2.
Key words:  thermoelectric material      cobaltite      thermoelectric property      doping      sol-gel method     
Received:  23 July 2010     
Fund: 

Supported by National Natural Science Foundation of China (Nos.51074038 and 50774018)

URL: 

https://www.ams.org.cn/EN/10.3724/SP.J.1037.2010.00370     OR     https://www.ams.org.cn/EN/Y2011/V47/I1/109

[1] Ibrahim M M, Saleh S A, Ibrahim E M M, Hakeem A M A. J Alloys Compd, 2008; 452: 200

[2] Xiang P H, Kinemuchi Y, Kaga H, Watari K. J Alloys Compd, 2008; 454: 364

[3] Seetawan T, Amornkitbamrung V, Burinprakhon T, Maensiri S, Tongbai P, Kurosaki K, Muta H, Uno M, Yamanaka S. J Alloys Compd, 2008; 416: 291

[4] Cheng J G, Sui Y, Fu H J, Lu Z, Wei B, Qian Z N, Miao J P, Liu Z G, Huang X Q, Zhu R B, Wang X J, Su W H. J Alloys Compd, 2006; 407: 299

[5] Li Y, Xu G Y, Jiang M F. J Mater Sci Technol, 2006; 22: 526

[6] Li N, Jiang Y, Li G H,Wang C, Shi J F, Yu D B. J Alloys Compd, 2009; 467: 444

[7] Terassaki I, Sasago Y, Uchinokura K. Phys Rev, 1997; 56B: 12685

[8] Shi Y W, Qiao G J, Jin Z H. Rare Met Mater Eng, 2005; 34: 12

(石尧文, 乔冠军, 金志浩. 稀有金属材料与工程, 2005; 34: 12)

[9] Itoh T, Kawata T, Kitajima T, Terasaki I. Proc 17th Int Conf on Thermoelectrics, NJ: IEEE, 1998: 595

[10] Mrotzek A, M¨uller E, Plewa J. Proc 22nd Int Conf on Thermoelectrics, NJ: IEEE, 2003: 219

[11] Ito M, Nagira T, Furumoto D, Oda Y, Hara S. Sci Technol Adv Mater, 2004; 5: 125

[12] Motohashi T, Naujalis E, Veda R, Isawa K, Karppinen M, Yamauchi H. Appl Phys Lett, 2001; 79: 1480

[13] Wu D, Wang N L, Li G, Luo J L , Zheng P, Chen X H, Wang C H, Luo X G, Jin R, Mandrus D. J Phys Chem Solids, 2006; 67: 635

[14] Pei J, Chen G, Li X, Li Y X, Zhou N. Mater Lett, 2009; 63: 1459

[15] Yakabe H, Fujita K, Nakamura K, Kikuchi K. Proc 17th Int Conf on Thermoelectrics, NJ: IEEE, 1999: 551 

[16] Cui Z Q, Liu B X. Metallography and Heat Treatment Principle. Harbin: Harbin Institute of Technology Press, 2001: 19

(崔忠圻, 刘北兴. 金属学与热处理原理. 哈尔滨: 哈尔滨工业大学出版社, 2001: 19)

[17] Zhong G X. Semiconductor Refrigeration and Its Application. Beijing: Science Press, 1989: 13, 190

(钟广学. 半导体制冷器件及其应用. 北京: 科学出版社, 1989: 13, 190)

[18] Park K, Jang K U, Kwon H C, Kim J G, Cho W S. J Alloys Compd, 2006; 419: 213

[19] Wang Y, Sui Y, Cheng J G, Wang X J, Miao J P, Liu Z G, Qian Z N, Su W H. J Alloys Compd, 2008; 448: 1

[20] Nagira T, Ito M, Katsuyama S, Majima K, Nagai H. J Alloys Compd, 2003; 348: 263
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