High-Throughput Preparation and Corrosion Performance of Yb–Gd Modified Si Bond Coat " /> Yb-Gd改性Si粘结层的高通量制备与腐蚀性能
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金属学报    DOI: 10.11900/0412.1961.2025.00002
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Yb-Gd改性Si粘结层的高通量制备与腐蚀性能

王晔晗1,2  吕熙睿2  石金瑜1,2  雷一明2  张 洁2  王京阳2

1 中国科学技术大学 材料科学与工程学院  沈阳 110016

2 中国科学院金属研究所 沈阳材料科学国家研究中心  沈阳 110016

High-Throughput Preparation and Corrosion Performance of Yb–Gd Modified Si Bond Coat

WANG Yehan 1,2, LV Xirui 2, SHI Jinyu 1,2, LEI Yiming 2, ZHANG Jie 2, WANG Jingyang 2

School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China, Shenyang 110016, China

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

引用本文:

王晔晗 吕熙睿 石金瑜 雷一明 张洁 王京阳. Yb-Gd改性Si粘结层的高通量制备与腐蚀性能[J]. 金属学报, DOI: 10.11900/0412.1961.2025.00002.

全文: PDF(5329 KB)  
摘要: 
新一代高推重比航空发动机对环境障涂层的服役寿命和温度提出更高要求,向Si粘结层中掺杂稀土元素有望提升其耐高温和耐腐蚀性能,而成分变化是稀土改性Si粘结层材料相组成及性能变化的根本原因。本工作通过多靶磁控溅射共沉积等方法,高通量制备、表征了Yb-Gd稀土改性Si粘结层材料芯片,研究了Yb-Gd硅化物的不同成分组合在1100、1300 ℃空气气氛和1300 ℃水蒸气-空气气氛下的相组成及微观形貌变化。结果表明,Yb-Gd-Si三元稀土硅化物高温氧化后主要产物为RE9.33(SiO4)6O2和RE2SiO5 (RE = Gd、Yb),随着氧化温度的升高,RE2SiO5由X1相转变为X2相。Yb-Gd-Si三元稀土硅化物高温水氧腐蚀后的形貌随成分变化而存在差异,其腐蚀机制为优先发生氧化,随后在水蒸气气流作用下,Si和RE以Si(OH)4和RE(OH)3的形式耗散,且在不同Si含量的影响下,产生不同形貌。通过高通量方法得到稀土硅化物性能数据库,之后依据不同成分组合,调控粘结层材料相组成,进而有望获得极端环境中具备高熔点等优异性能的新型粘结层材料。
关键词 粘结层稀土硅化物高通量方法组合材料芯片物理气相沉积磁控溅射    
Abstract

Silicon carbide fiber-reinforced silicon carbide ceramic matrix composites (SiCf/SiC CMCs) are considered strategic thermal, structural materials for advanced aircraft engines due to their lightweight, high specific strength, and excellent high-temperature capability. In harsh combustion environments, environmental barrier coatings (EBCs) are required to protect SiCf/SiC CMC from water vapor corrosion and low-melting-point oxide corrosion, ensuring the long-term serviceability of SiCf/SiC components. The development of next-generation high thrust-to-weight ratio aero engines has imposed more stringent requirements on the service life and temperature resistance of EBCs. Typical EBCs consist of a ceramic topcoat and a Si bond coat. However, the water vapor corrosion and oxidation of Si are essential factors contributing to EBC failure during service. Doping rare earth elements into the Si bond coat is expected to enhance its high-temperature capability and corrosion resistance, making it a promising strategy for developing advanced bond coat materials. For rare earth element-modified Si bond coat materials, composition variations fundamentally influence performance changes, including phase composition. However, the composition-property relationship of rare earth-modified Si bond coats remains unclear. In this study, Yb–Gd modified Si bond coat material chips were prepared using multi-target magnetron sputtering for co-deposition and were characterized using a high-throughput method. Transformation trends were identified by analyzing the phase composition and micromorphological changes in different Yb–Gd silicide compositions under extreme conditions (1100 and 1300 °C in an air atmosphere and 1300 °C in a water vapor-air atmosphere). It was found that the primary oxidation products of the Yb–Gd–Si ternary rare earth (RE) silicide at high temperatures are RE9.33(SiO4)6O2 and RE2SiO5 (where RE = Gd, Yb). RE2SiO5 undergoes a phase transformation from X1 to X2 as oxidation temperature increases. The morphology of Yb–Gd–Si silicide varies with composition after high-temperature water vapor corrosion. The corrosion mechanism involves initial oxidation, followed by the dissipation of Si and RE in the form of Si(OH)4 and RE(OH)3 under water vapor flow, where different silicon contents lead to distinct corrosion morphologies. A high-throughput performance database for RE silicide was established, enabling the regulation of component combinations to influence the phase composition of the bond coat material. This approach facilitates the development of new bond coat material with high melting points for extreme conditions.

Key wordsBond coat    Rare earth silicide    High-throughput    Combination material chip    Physical vapor deposition    Magnetron sputtering
收稿日期: 2025-01-03     
ZTFLH:  TG174.4  
基金资助:国家自然科学基金项目;国家重点研发计划项目;辽宁省兴辽英才计划项目;中国科学院国际伙伴计划项目;中国航发集团产学研合作项目
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