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Wettability Improvement and Brazing of Si3N4by Sputtered Al |
Geliang LIU1, Bingyang MA1, Hailong SHANG1,2, Fan CHEN1, Rongbin LI2, Geyang LI1( ) |
1 State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai 200240, China 2 Shanghai Dianji University, Shanghai 201306, China |
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Cite this article:
Geliang LIU, Bingyang MA, Hailong SHANG, Fan CHEN, Rongbin LI, Geyang LI. Wettability Improvement and Brazing of Si3N4by Sputtered Al. Acta Metall Sin, 2017, 53(12): 1645-1650.
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Abstract In the present technology, the brazing of Si3N4 needs a reactive transition layers to resolve the non-wetting problem of usual metal fillers. Aluminum could wet Si3N4 without reaction but the brazing is very difficult due to wetting temperature above 1000 ℃. In this work, the wetting effect of sputtered Al films on Si3N4 and its physics essence were revealed. Based on this, the brazing of Si3N4 ceramic with Al or Al-Ni film fillers was realized near their melting temperature. The results showed that the seams of brazing joints with direct sputtered Al on Si3N4 film were well-stacked and less defects, and well metallurgically bonded to ceramic without reactive transition layers. The shear strength of pure Al/Si3N4 joint reached 106 MPa. The strength increased to 148 MPa with adding 1.0%Ni into film filler due hypoeutectic structure in the seam. With further increasing Ni content to 3.0%, the eutectic structure of the seam slightly decreased the strength of joint to 132 MPa. These joints above all fractured in joint seams. Moreover, the Al-1.0%Ni film filler first sputtered Ni layer was compared. Its brazing joint fractured at the interface between seam and ceramic and the shear strength decreased to only 81 MPa. This comparsion revealed the "wetting" effect of the bombardment of energetic sputtered Al particles. This effect still existed after filler melting and the direct brazing of Si3N4 ceramic without reactive transition layers was realized.
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Received: 20 January 2017
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Fund: Supported by National Natural Science Foundation of China (Nos.51401120 and 51671125) and Natural Science Foundation of Shanghai (No.16ZR1412800) |
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