STUDY ON DEPOSITION OF MAGNETIC FILMS USING ARC ION PLATING
CHANG Zhengkai, XIAO Jinquan, CHEN Yuqiu, LIU Shanchuan, GONG Jun, SUN Chao
Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016
Cite this article:
CHANG Zhengkai, XIAO Jinquan, CHEN Yuqiu, LIU Shanchuan, GONG Jun, SUN Chao. STUDY ON DEPOSITION OF MAGNETIC FILMS USING ARC ION PLATING. Acta Metall Sin, 2012, 48(5): 547-554.
Abstract Arc ion plating (AIP) has been widely used for depositing various kinds of coatings due to the excellent characteristics of high deposition rate, convenient parameter control, high degree of ionization in the target material, good coating--substrate adhesion, flexibility of target arrangements and merits of producing coatings with high packing density. Magnetic films, with a few micrometers or less, could be utilized in the electronics industry, such as magnetic recording, magnetic microelectromechanical systems, magneto optical modulator, and so on. In AIP process, due to magnetic shielding and self--induced magnetic field, arc spot on the surface of the magnetic target moved outside all the time, and the erosion of the magnetic target could not be stable. In this study, arc spot outside moving and unstable erosion of the magnetic target in arc ion plating have been investigated. The distribution of the magnetic field of the nonmagnetic target and the magnetic target under an additional magnetic field was simulated by the finite element method (FEM). The effect of magnetic field on the arc spot movement was researched. With the physical mechanism of the arc spot discharge, the feasibility on the solution of the application problem of the magnetic target has been discussed by the program of the composited structure target, which were composed of magnetic target materials and target shell of low saturation vapor pressure metal, target shell of insulating ceramics, or target shell of soft magnetic metal. The results showed that all these solutions could solve the problem of arc spot outside moving efficiently. In the study, the transition temperature is (136.6±23.0) ℃ in the solutions of the target shell of low saturation vapor pressure metal or insulating ceramics, during which the arc striking frequently transformed to the controlled movement of arc spot.
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