SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3 N_4 SUBSTRATE AND Ti-DEPOSITED FILM

Acta Metall Sin

1989, Vol. 25

Issue (6): 143-145 DOI:

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SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3 N_4 SUBSTRATE AND Ti-DEPOSITED FILM

XIAN Aiping;SI Zhongyao Institute of Metal Research; Academia Sinica; Shenyang XIAN Aiping; Institute of Metal Research; Aeadxmiav Sinica; ShenYang 110015

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XIAN Aiping;SI Zhongyao Institute of Metal Research; Academia Sinica; Shenyang XIAN Aiping; Institute of Metal Research; Aeadxmiav Sinica; ShenYang 110015. SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3 N_4 SUBSTRATE AND Ti-DEPOSITED FILM. Acta Metall Sin, 1989, 25(6): 143-145.

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Abstract The chemical reaction as solid state between pressless sintered Si_3N_4 substrate andTi-deposited film has been studied by X-ray diffraction analysis. The reaction all depends up-on temperature. It seems no reaction below 973 K; Ti_2N and Ti_5Si_3 are the reaction productsfrom 1073 to 1123K, and finally, till 1173K, the Ti-deposited film over Si_3N_4 substrate willexhaust itself and the reaction products change into TiN and Ti_5Si_4. The lattice constant of Si_3N_4is unaltered thronghout postannealing. This implies that the Ti atoms will never dissolve intoSi_3N_4 lattice.

Key words: Ti Si_3N_4 interface solid reaction

Received: 18 June 1989

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