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| Preparation and Properties Of ZnO:Al (ZAO) Thin Films Eposited by DC Reactive Magnetron Sputtering |
| PEI Zhiliang; ZHANG Xiaobo; WANG Tiegang; GONG Jun; SUN Chao; WEN Lishi |
| Institute of Metal Research; The Chinese Academy of Sciences; Shenyang 110016 |
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Cite this article:
PEI Zhiliang; ZHANG Xiaobo; WANG Tiegang; GONG Jun; SUN Chao; WEN Lishi. Preparation and Properties Of ZnO:Al (ZAO) Thin Films Eposited by DC Reactive Magnetron Sputtering. Acta Metall Sin, 2005, 41(1): 84-.
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Abstract
Al-doped ZnO(ZAO) layers have been prepared by reactive DC magnetron
sputtering from Zn:2.0%Al (mass fraction) alloy target on glass and
silicon wafer substrates. The influences of the deposition
parameters on the crystallization behavior as well as electrical and
optical properties of ZAO films have been investigated. The crystallinity of the films was
improved and the columnar crystalline growth became dominant as the substrate temperature
increased. All the films show a compressive stress, which increased as the DC power increased,
while it decreased as the substrate temperature was raised. Optical
transmittance up to 80% in the
visible range and electrical resistivity as low as were obtained under
optimal deposition conditions.
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Received: 18 January 2004
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