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PULSED PLASMA PRODUCTION OF c-BN THIN FILMS AT ROOM TEMPERATURE AND LOW PRESSURE |
YAN Pengxun;YANG Size;SUN Mu;REN Yufeng;LI Bing;CHEN Xichen(Institute of Physics; Chinese Academy of Sciences;Beijing 100080)(Manuscript received 1995-03-17;in revised form 1995-06-19) |
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Cite this article:
YAN Pengxun;YANG Size;SUN Mu;REN Yufeng;LI Bing;CHEN Xichen(Institute of Physics; Chinese Academy of Sciences;Beijing 100080)(Manuscript received 1995-03-17;in revised form 1995-06-19). PULSED PLASMA PRODUCTION OF c-BN THIN FILMS AT ROOM TEMPERATURE AND LOW PRESSURE. Acta Metall Sin, 1995, 31(23): 489-492.
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Abstract Using pulsed plasma technique the cubic boron nitride thin films has been produced on the single silicon,NaCl or GCr15 bearing steel substrate at room temperatureand low pressure.The SEM,TEM,IR,AES,microhardness tester and scratching tester were used to examine the properties and structure of boron nitride thin films on the surface of various substrates.The results show that the structure of BN thin films strongly depends on the experimental conditions, the formation of the nuclei has no relationship with substrate materials,but growth of the nuclei depends on the substrate partly.
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