Si-RICH LAYER FORMATION DURING DIRECTIONAL SOLIDIFICATION OF Al-Si EUTECTIC ALLOY IN ELECTROMAGNETIC FIELD

Acta Metall Sin

1990, Vol. 26

Issue (5): 150-152 DOI:

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Si-RICH LAYER FORMATION DURING DIRECTIONAL SOLIDIFICATION OF Al-Si EUTECTIC ALLOY IN ELECTROMAGNETIC FIELD

REN Zhongming;SU Hui;JIN Junze Dalian University of Technology

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REN Zhongming;SU Hui;JIN Junze Dalian University of Technology. Si-RICH LAYER FORMATION DURING DIRECTIONAL SOLIDIFICATION OF Al-Si EUTECTIC ALLOY IN ELECTROMAGNETIC FIELD. Acta Metall Sin, 1990, 26(5): 150-152.

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Abstract The formation of a special Si-rich layer on the periphery of Al-si eutectic alloyspecimen during directional solidification in rotary electromagnetic field has been investigated.This layer seems due to the migration of some Si grains onto the crucible wall, then stagnatingand coarsening further.

Key words: Al-Si eutectic alloy Si-rich layer directional solidification

Received: 18 May 1990

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y1990/V26/I5/150

1 Shingu P H, Kurosaki M, Jin-Junze. Trans Jpn Inst Met, 1986; 27: 546
2 Miwa K, Kakamu T, Ohashi T. Trans Jpn Inst Met, 1985; 26: 549
3 桃野正,井川克也.轻金属,1975;25:403x

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