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PLASMA CHEMICAL VAPOR DEPOSITED TiN FILMS |
LI Shizhi;XU Xiang Qingdao Institute of Chemical Technology; Qingdao; ShandongProfessor;Thin Solid Films Lab.;Qingdao Institute of Chemical Technology;53 Zhengzhou Road; Qingdao; Shandong |
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Cite this article:
LI Shizhi;XU Xiang Qingdao Institute of Chemical Technology; Qingdao; ShandongProfessor;Thin Solid Films Lab.;Qingdao Institute of Chemical Technology;53 Zhengzhou Road; Qingdao; Shandong. PLASMA CHEMICAL VAPOR DEPOSITED TiN FILMS. Acta Metall Sin, 1988, 24(3): 229-235.
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Abstract TiN films were deposited onto high speed steel, Si(100) and Si(111) substrates using D. C. PCVD method. The crystallographic structure, surfacemorphology, fracture cross section, microhardness and the chlorine content of thePCVD TiN films were studied. Part of the samples were analyzed using SIMS, AESand ESCA. Experimental results indicated that the structure and properties of theTiN films on different substrates were almost the same when the same depositionparameters were used. At about 500℃, the mode of the film growth undergoes achange probably from layer growth to island growth. The PCVD TiN films had aratio N/Ti of 1, and revealed strong (200) texture. A mixed region existed betweenthe films and the substrates. It could be concluded that PCVD TiN films show goodadherence and excellent wear resistant properties, and are suitable for anti-frictioncoating.
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Received: 18 March 1988
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1 Li Shizhi, Huang Wu, Yang Hongshun, Wang Zhongshu. Plasma Chemistry and Plasma Processing 1984; 4: 148 2 Archer N J. Thin Solid Films, 1981; 80: 221 3 Rosler R S, Benjing W C, Baldo J. Solid State Technol, 1976; 19: 45 4 Bachmann P. In: Timmermans C J ed., 7th Int Symp Plasma Chemistry, Vol. 1, Eindhoven, The Netherlands, 1985: 7 5 土居阳,村上义夫.真空,1985;28:213 6 徐翔,谢雁,赵程,李世直.真空科学与技术,1985;5:77 7 #12 8 Thornton J A. Ann Rev Mater Sci, 1977; 7: 239 9 Veprek S., Thin Solid Films, 1985; 130: 135 10 Veprek S. In: Kaldis E ed., Current Topics in Materials Science Vol. 4, Amsterdam: North-Holland, 1980: 151 11 王兴源.青岛化工学院学报,1980;1:48 12 杨洪顺,李世直.(未发表结果) 13 Vook R W. Int Metall Rev, 1982; 27: 209 14 Li Shizhi, Yang Hongshun. In: Timmermans C J ed., 7th Ini Symp Plasma Chemistry, Vol. 1, Eindhoven, The Netherlands, 1985: 68 15 石玉龙,李世直.青岛化工学院学报,1988;1: 16 Sundgren J-E. Ttin Solid Films, 1985; 128: 21 17 Matthews A, Lefkow A R. Thin Solid Films, 1985; 126: 283 |
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