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Acta Metall Sin  1988, Vol. 24 Issue (3): 229-235    DOI:
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PLASMA CHEMICAL VAPOR DEPOSITED TiN FILMS
LI Shizhi;XU Xiang Qingdao Institute of Chemical Technology; Qingdao; ShandongProfessor;Thin Solid Films Lab.;Qingdao Institute of Chemical Technology;53 Zhengzhou Road; Qingdao; Shandong
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LI Shizhi;XU Xiang Qingdao Institute of Chemical Technology; Qingdao; ShandongProfessor;Thin Solid Films Lab.;Qingdao Institute of Chemical Technology;53 Zhengzhou Road; Qingdao; Shandong. PLASMA CHEMICAL VAPOR DEPOSITED TiN FILMS. Acta Metall Sin, 1988, 24(3): 229-235.

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Abstract  TiN films were deposited onto high speed steel, Si(100) and Si(111) substrates using D. C. PCVD method. The crystallographic structure, surfacemorphology, fracture cross section, microhardness and the chlorine content of thePCVD TiN films were studied. Part of the samples were analyzed using SIMS, AESand ESCA. Experimental results indicated that the structure and properties of theTiN films on different substrates were almost the same when the same depositionparameters were used. At about 500℃, the mode of the film growth undergoes achange probably from layer growth to island growth. The PCVD TiN films had aratio N/Ti of 1, and revealed strong (200) texture. A mixed region existed betweenthe films and the substrates. It could be concluded that PCVD TiN films show goodadherence and excellent wear resistant properties, and are suitable for anti-frictioncoating.
Key words:  plasma chemical vapor deposition      TiN film     
Received:  18 March 1988     
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