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金属学报  2026, Vol. 62 Issue (8): 1357-1375    DOI: 10.11900/0412.1961.2025.00417
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激光诱导转移技术制备超精细导电图案研究进展
袁康1,2, 曹文鑫2(), 孙春强1,2, 王卓超1,2, 王笑笑2, 张宇民1, 朱嘉琦1,2()
1 哈尔滨工业大学 航天学院 哈尔滨 150001
2 哈尔滨工业大学 郑州研究院 郑州 450000
Research Progress on the Preparation of Ultrafine Conductive Patterns Using Laser-Induced Transfer Technology
YUAN Kang1,2, CAO Wenxin2(), SUN Chunqiang1,2, WANG Zhuochao1,2, WANG Xiaoxiao2, ZHANG Yumin1, ZHU Jiaqi1,2()
1 Aerospace College, Harbin Institute of Technology, Harbin 150001, China
2 Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
引用本文:

袁康, 曹文鑫, 孙春强, 王卓超, 王笑笑, 张宇民, 朱嘉琦. 激光诱导转移技术制备超精细导电图案研究进展[J]. 金属学报, 2026, 62(8): 1357-1375.
Kang YUAN, Wenxin CAO, Chunqiang SUN, Zhuochao WANG, Xiaoxiao WANG, Yumin ZHANG, Jiaqi ZHU. Research Progress on the Preparation of Ultrafine Conductive Patterns Using Laser-Induced Transfer Technology[J]. Acta Metall Sin, 2026, 62(8): 1357-1375.

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摘要: 

超精细导电图案的制备是推动电子器件向微型化、柔性化和集成化方向发展的关键技术，对新一代微电子、光电子及柔性器件的创新突破具有不可替代的关键价值。激光诱导转移(LIT)技术凭借其高精度、非接触、材料适应性强的独特优势，大幅提升了超精细图案的分辨率和跨材料兼容能力。近年来，围绕LIT技术的研究在机理探索、工艺优化及应用拓展等方面取得了显著进展，但目前关于“工艺参数-转移机理-高性能应用”之间的内在关联仍缺乏系统性解构，制约了该技术从实验室研发向工业级应用的转化。鉴于此，本文首先回顾了LIT技术从概念提出到多领域应用的发展历程，介绍了LIT技术的转移过程及其在超精细导电图案制造中的优势；进而深入解析了以热效应为主导和以动量传递为核心的两类转移机制，并讨论了材料特性、激光参数和供体-受体界面间距等关键工艺参数对超精细导电图案质量的影响规律。在此基础上，对比分析了单次脉冲转移、多次脉冲叠加转移及复合工艺集成等多种技术路径的特性差异与适用场景。最后，系统总结了基于LIT技术制备的超精细导电图案在微电子电路修复、高性能传感器、柔性可穿戴电子及电池制造等领域的典型应用案例。
关键词 ： 激光诱导转移,  超精细导电图案,  微纳制造    
Abstract：

The fabrication of ultrafine conductive patterns serves as a core enabling technology propelling the evolution of electronic devices toward miniaturization, flexibility, and high-density integration. Driven by the rapid development of emerging fields such as Internet of Things terminals, flexible wearable electronics, and microenergy devices, the demand for electronic devices in terms of pattern linewidth precision, cross-substrate compatibility, and complex structure adaptability continues to escalate. However, traditional fabrication techniques face inherent bottlenecks in balancing precision control, flexible adaptability, and cost-effective fabrication. Laser-induced transfer (LIT) technology, leveraging its unique advantages of high precision, noncontact processing, and broad material compatibility, has remarkably improved the resolution of ultrafine patterns and expanded cross-material adaptability. This technology provides an innovative technical solution for addressing traditional process bottlenecks in this domain. In recent years, LIT-related research has achieved substantial advancements in mechanistic elucidation, process optimization, and application extension. Nevertheless, a systematic review synthesizing its key progress and evolving trends is still lacking. Accordingly, this review systematically summarizes the current research status and future development directions of LIT technology for the fabrication of ultrafine conductive patterns. First, it traces the technological evolution of LIT from conceptual initiation to multifield practical applications, elaborating on the core transfer process of LIT and its inherent advantages in ultrafine conductive pattern fabrication. It subsequently delves into two major transfer mechanisms, namely, thermally dominated and momentum-transfer-driven mechanisms and systematically discusses the regulatory effects of critical process parameters (e.g., material intrinsic properties, laser process parameters, and the donor-receiver interface distance) on the quality of ultrafine conductive patterns. On this basis, this review conducts a comparative analysis of the performance characteristics and suitable application scenarios of multiple technical implementation routes, such as single-pulse transfer, multipulse superposition transfer, and integrated composite processes. Finally, this review systematically summarizes the typical application cases of LIT-fabricated ultrafine conductive patterns in fields including microelectronic circuit repair, high-performance sensor fabrication, flexible wearable electronics, and battery manufacturing.
Key words： laser-induced transfer    ultrafine conductive pattern    micro-nano manufacturing
收稿日期: 2025-12-22     
ZTFLH:  TG665  
基金资助:国家自然科学基金项目(52102039);国家自然科学基金项目(52032004);中国航空科学基金项目(2022Z065077001);黑龙江省重点研发计划项目(GA21D001);黑龙江省重点研发计划项目(2023T160156);黑龙江省重点研发计划项目(2022ZX06C05);黑龙江省重点研发计划项目(2024ZX12C08);黑龙江省重点研发计划项目(GJLX20240001)
通讯作者: 朱嘉琦，zhujq@hit.edu.cn，主要从事红外薄膜与晶体研究; 曹文鑫，caowenxin@hit.edu.cn，主要从事功能涂层研究
Corresponding author: ZHU Jiaqi, professor, Tel: (0451)86417970, E-mail: zhujq@hit.edu.cn; CAO Wenxin, professor, Tel: 15945677968, E-mail: caowenxin@hit.edu.cn
作者简介: 袁 康，男，1999年生，博士生
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https://www.ams.org.cn/CN/10.11900/0412.1961.2025.00417      或      https://www.ams.org.cn/CN/Y2026/V62/I8/1357

图1  激光诱导转移(LIT)技术的典型转移机制与过程演化示意图[14]
Comparison dimensionLIFTLIBT
Transparency requirement for donor substrateLaser→passes through transparent donor substrate→acts on donor material→material is transferred forward to the receiver substrateLaser→directly irradiates the surface of donor material→material is transferred backward to the receiver substrate
Requirement for donor substrateMust be transparent (e.g., glass, quartz) and compatible with laser penetration characteristicsNo mandatory requirement; no reliance on transparent donor substrate
Requirement for receiver substrateNo mandatory requirement; selectable based on application scenariosNo mandatory requirement; selectable based on application scenarios

Device complexity

Relatively high; requires supporting transparent donor substrate and precise optical path calibration systemRelatively low; eliminates the need for transparent donor substrate and related optical path adaptation components, featuring a simpler structure and reduced difficulty in optical path calibration

Core advantage

Compatible with various donor material systems, offering broad compatibility

Simplified device structure, lower cost, compatible with opaque donor materials, and avoids material limitations and losses caused by transparent substrates
表1  激光诱导前向转移(LIFT)和激光诱导后向转移(LIBT)技术的核心装置及光路对比[13~15]
图2  LIT技术的发展历程
Technical variantEnergy transfer mechanismCore problem addressedExpansion of application fieldRef.
MAPLE-DWMatrix vaporization generates moderate vapor pressurePhase-change damage of heat-sensitive materialsOrganic semiconductors, bio-inks[21]
DR-LIFTPlasma expansion of the metal absorption layer generates pressure wavesDirect photothermal damage of materialsMicrofluidic chips, diagnostic sensors[22]
TP-DRLPhotodecomposition of polymers releases gases to generate shock wavesThermal degradation of organic materialsOLED, QLED displays[23]
BA-LIFTPolymer bubble expansion drives fluid flowSplash control for high-resolution fluid transferFlexible circuits, transparent electrodes[24]
表2  常见LIT技术突破的核心机制总结[21~24]
图3  能量通过表面和熔池转移[39](a) shallow melt pool test case (b) deep melt pool test case
Material typeTransfer characteristicKey parameter and caseRef.

Metal thin film

Dominated by melting-solidification phase transformation, with control over thermal diffusion length

Au nanoparticles (60 nm film thickness): 30 fs, 78 nJ, 800 nm diameter;

Cu-Ag alternating layers (4 layers, total thickness ≈ 500 nm): 532 nm laser wavelength, 1 ns, 5 μJ, 10 μm transferred voxel diameter

[53,54]

Biological material

Protected by DRL, enabling low-damage transfer

cDNA: 355 nm laser wavelength, 10 ns, 0.5 μJ, 40 μm spot diameter; peptide microarray (SLEC matrix, 10% w/w): 405 nm laser wavelength, 7 ms, 90 mW, 110 μm fluorescent spot diameter

[55,56]

Semiconductor

Non-linear ionization and lattice reconstruction, relying on beam shaping

Si NPs: 800 nm laser wavelength (linear absorption) to obtain 205 nm particles;

silicon semiconductor components (100 μm × 100 μm × 90 μm): 355 nm laser wavelength, 10 ns, 245-700 mJ·cm-2

[57,58]

Conductive polymer

Sacrificial layer absorbs laser to generate gasification for propulsion, with low-temperature transfer protecting functional groups

PVP/5%f-MWCNT composite material (on Al micro-electrodes): 266 nm laser wavelength, 220 mJ·cm-2, 30 μm × 40 μm pixels;

PEDOT:PSS:GO composite film (80 nm thickness): 193 nm laser wavelength, 15 ns, 450 mJ·cm-2

[59,60]

Liquid ink

Bubble-jet fluid dynamics, breaking through viscosity/particle limitations

Silver paste (50 μm thickness): 532 nm laser wavelength, 15 ns, 3.2 J·cm-2, 70 μm diameter; silver screen printing ink (80 μm film thickness): 1064 nm laser wavelength, 100 ns, 60 μJ, 160 μm voxel diameter

[61,62]

3D structure

Droplet stacking, with optimized interface bonding

Cu pillar (diameter less than 5 μm, length 2 mm): 515 laser wavelength, 6.7 ps, vertical interconnection TS;

Au cantilever ( width × thickness × length = 50 μm × (10-20) μm × (450-800) μm): 532 nm laser wavelength, 0.8 ns, 4 μJ

[63,64]
表3  常见LIT用材料的兼容性与转移机制[53~64]
图4  不同厚度磁控溅射银薄膜表面形貌的SEM像及对应的三维粗糙度分布图[65]
图5  不同激光能量下气泡形成和银浆转移的动态过程[73](a) below critical threshold (b) critical transfer threshold(c) above critical threshold (d) much higher than critical threshold
图6  不同供体-受体间距的80 nm厚铜膜沉积点的形貌特征[77](a) ΔZ = 0 (b) ΔZ = 10 μm (c) ΔZ = 30 μm (d) ΔZ = 40 μm
图7  采用LIT多次脉冲转移法制备的3D金属柱[84,85]
图8  复合工艺路线[86~88]
图9  LIT制备超精细导电图案的关键应用领域
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