MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING

doi:10.11900/0412.1961.2015.00189

Acta Metall Sin

2016, Vol. 52

Issue (1): 10-16 DOI: 10.11900/0412.1961.2015.00189

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MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING

Bin WANG^1,²,Liangyin XIONG^1,²,Shi LIU^1,²(

)

1 Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
2 Key Laboratory of Nuclear Materials and Safety Assessment, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

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Bin WANG,Liangyin XIONG,Shi LIU. MgO SECONDARY ELECTRON EMISSION FILM PREPARED BY RADIO-FREQUENCY REACTIVE SPUTERRING. Acta Metall Sin, 2016, 52(1): 10-16.

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Abstract

High, stable and durable secondary electron emission is an essential property for the application of dynodes of electron multipliers and photomultiplier tubes. The MgO film have been widely used as dynode materials for the applications owing to its good secondary electron emission properties. In this work, MgO and CoO doped MgO films, as secondary electron emission films, were prepared by radio-frequency reactive sputtering deposition on the stainless steel substrate, and also another MgO film at the surface of activated AgMg alloy was prepared. The effect of preparation processes on the secondary electron emission properties of the films was focused. It was found that the film thickness significantly affected the resistance to electron beam bombardment. With the increase of film thickness, the resistance to electron beam bombardment was significantly enhanced. Radio-frequency reactive sputtering deposition could control the film thickness by varying deposition time. The surface quality of MgO film is quite sensitive to the oxygen partial pressure of the deposition atmosphere. Higher oxygen partial pressure caused higher surface roughness, which was harmful to the secondary electron emission. After doping with CoO, the surface of MgO films were much flatter and smoother, resulting in the improvement of the secondary electron emission coefficient. The CoO doping also reduced of the sensitivity of film surface quality to the oxygen partial pressure. The secondary electron emission coefficient of CoO doped MgO film sharply decreased after heated at 550 ℃ for 1 h due to the surface quality degrading and the thermal decomposition induced loss of oxygen. Elevating the substrate temperature or oxygen partial pressure during deposition accounted for the presence of metallic Mg in film and the degrading of surface quality, which finally lead to lower secondary electron emission coefficient.

Key words: radio-frequency reactive sputtering thickness of film surface roughness secondary electron emission coefficient resistance to electron beam bombardment

Received: 02 April 2015

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https://www.ams.org.cn/EN/10.11900/0412.1961.2015.00189 OR https://www.ams.org.cn/EN/Y2016/V52/I1/10

Fig.1 Secondary electron emission coefficient (d) decay with the electron beam bombardment time (t) of MgO films prepared by activation of AgMg alloy (sample No.1) and radio-frequency reactive sputtering (sample No.2)

Fig.2 Components of elements vs depth of samples No.1 (a) and No.2 (b)

Fig.3 SEM images of MgO films prepared by radio-frequency reactive sputtering with O₂/Ar=0.5/42 (a), 1.1/42 (b), 1.7/42 (c) and 2.0/42 (d)

Fig.4 Components of elements vs depth of CoO doped MgO film (sample No.3) (a), and the Co2p binding energy peak position at different sputtering times (b) (The etch time of 100 s corresponds to the depth of about 10 nm from the surface of the sample)

Fig.5 AFM images (a, b) and depth vs distance along the lines in Figs.5a and b (c, d) of samples No.2 (a, c) and No.3 (b, d)

Fig.6 SEM images of surfaces of the CoO doped MgO films prepared by different radio-frequency reactive sputtering processes and thermal treatments

Fig.7 Components of elements vs depth of the CoO doped MgO films prepared by different radio-frequency reactive sputtering processes and thermal treatments

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