Acta Metall Sin  1991, Vol. 27 Issue (3): 136-141    DOI:

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COMPUTER SIMULATION OF ION BEAM ENHANCED DEPOSITION OF TiN FILMS

WANG Xi;ZHOU Jiankun;CHEN Youshan;LIU Xianghuai;ZOU Shichang Ion Beam Laboratory; Shanghai Institute of Metallurgy; Academia Sinica

WANG Xi;ZHOU Jiankun;CHEN Youshan;LIU Xianghuai;ZOU Shichang Ion Beam Laboratory; Shanghai Institute of Metallurgy; Academia Sinica. COMPUTER SIMULATION OF ION BEAM ENHANCED DEPOSITION OF TiN FILMS. Acta Metall Sin, 1991, 27(3): 136-141.

Abstract References Related Articles Recommended Metrics Download:  PDF(551KB)  Export:  BibTeX | EndNote (RIS)       Abstract  A Monte-Carlo comupter simulation has been performed to describe, atatomic level, the growth of TiN films formed by ion beam enhanced deposition(IBED). The simulation is based on a random target, fixed free path of moving par-ticles and binary collisions. An alternate process of deposition of titanium atomsand implantation of nitrogen ions is applied instead of the actual continuous andsynchronous process of IBED. According to the actual conditions, the adsorptionof nitrogen gas, which is leaked out from the ion source, at the fresh titaniumlayer surface has been considered. In addition, the change of the composition pro-file and the density profile during film growth is taken into account. It shows thatthe titanium deposition rate has strong influence on the film composition. Whenthe titanium deposition rate is low, the nitrogen concentration of the film is rela-tively insensitive to the atomic arrival ratio, R, of implanted nitrogen ions to de-posited titanium atoms. It is demonstrated that the width of the intermixed regionbetween the film and substrate increases with the increase of R. The results obtain-ed are in agreement with the experimental measurements. Key words:  ion beam enhanced deposition      TiN film      computer simulation      Received:  18 March 1991      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y1991/V27/I3/136 1 Rossnagel S M. Cuomo J J. MRS Bull, 1987; 16: 40 2 Kant R A, Sartwell B D, Singer I L. Vardiman R G. Nucl Instrum Methods Phys Res, 1985; B7/8: 915 3 Kunibe T, Tagomori K, Sumiya T, Chida N, Matsuura M, Sakurada Y. Nucl Instrum Methods Phys Res, 1989; B 39: 170 4 Mueller K-H. 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[7] SUI Zhitong;ZHANG Peixin(Northeastern University; Shenyang 110006). SELECTIVE PRECIPITATING BEHAVIOR OF THE BORON COMPONENTS FROM THE BORON SLAGS[J]. 金属学报, 1997, 33(9): 943-951. [8] YIN Aijun; LI Jing; LI Hinhai; HUANG Kexiong; JIANG Hanying (Central South University of Technology; Changsha 410083) (Manuscript received 1995-06-30; in revised form 1995-12-01). COMPUTER SIMULATION ON MINOR ELEMENT BEHAVIOUR IN COPPER FLASH SMELTING[J]. 金属学报, 1996, 32(4): 387-392. [9] YU Li; LIU Jiwen;ZHAO Jie; DAI Shaoxia;JIN Zhujing;WANG Huijun(State Key Laboratory of Corroston and Protection;Institute of Corroston and Protection of Metals; Chinese Academy of Sciences;Shenyang;110015)( Metallurgical College; Mianjing Universily;Tianjin 300400 )(Manuscript received 1995-12-06; in revised form 1996-09-02). EFFECT OF SUBSTRATE TEMPERATURE ON THE PROPERTIES OF ION PLATING TiN FILMS[J]. 金属学报, 1996, 32(12): 1270-1274. 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