|
|
|
| OXYGEN PARTIAL PRESSURE MODULATION EFFECT OF THE FERROMAGNETISM IN Zn1-xCoxO1-δ MAGNETIC SEMICONDUCTOR |
| JI Gang;Ze ZHANG;;; |
| 北京工业大学 |
|
Cite this article:
JI Gang; Ze ZHANG. OXYGEN PARTIAL PRESSURE MODULATION EFFECT OF THE FERROMAGNETISM IN Zn1-xCoxO1-δ MAGNETIC SEMICONDUCTOR. Acta Metall Sin, 2008, 44(11): 1399-1403 .
|
|
|
Abstract The microstructure of the room temperature ferromagnetic semiconductor Zn1-xCoxO1-δ was investigated by analytical electron microscopy. The experimental results indicated that the oxygen content decided the microstructure and the magnetic property of Zn1-xCoxO1-δ. The films deposited under poor oxygen were consistent of 5nm nanocrystal wurtzite Zn1-xCoxO1-δ and amorphous Co. They were all ferromagnetic phases. The films deposited under rich oxygen were consistent of 10~20nm nanocrystal Zn1-xCoxO1-δ and antiferromagnetic phase CoO. The concentration of the oxygen vacancies was greatly reduced, and the room temperature ferromagnetism was greatly weakened and even disappeared.
|
|
Received: 20 March 2008
|
|
|
[1]Datta S,Das B.Appl Phys Lett,1990;56:665
[2]Prinz G,Hathaway K.Phys Today,1995;48(4):24
[3]Wolf S A,Awschalom D D,Buhrman R A,Daughton J M, yon Molnar S,Roukes M L,Chtchelkaova A Y,Treger D M.Science,2001;294:1488
[4]Schmidt G,Ferrand D,Molenkamp L W,Filip A T,van Wees B J.Phys Rev,2000;62B:R4790
[5]Hanbicki A T,Jonker B T,Itskos G,Kioseoglou G,Petrou A.Appl Phys Lett,2002;80:1240
[6]Schmidt G,Molenkamp L W.J Appl Phys,2001;89:7443
[7]Dietl T,Ohno H,Matsukura F,Cibert J,Ferrand D.Sci- ence,2000;287:1019
[8]Sato K,Katayama-Yoshida H.Jpn J Appl Phys,2000; 39B:L555
[9]Sato K,Katayama-Yoshida H.Semicond Sci Technol, 2002;17:367
[10]Liu G L,Cao Q.Deng J X,Xing P F,Tian Y F,Chen Y X,Yan S S,Mei L M.Appl Phys Lett,2007;90:052504
[11]Yan S S,Ren C,Wang X,Xin Y,Zhou Z X,Mei L M,Ren M J,Chen Y X,Liu Y H,Garmestani H.Appl Phys Lett, 2004;84:2376
[12]Venkatesan M,Fitzgerald C B,Lunney J G,Coey J M D. Phys Rev Lett,2004;93:177206
[13]Lee H J,Jeong S Y,Cho C R,Park C H.Appl Phys Lett, 2002;81:4020
[14]Yin S,Xu M X,Yang L,Liu J F,Rosner H,Hahn H, Gleiter H,Schild D,Doyle S,Liu T,Hu T D,Takayama- Muromachi E,Jiang J Z.Phys Rev,2006;73B:224408
[15]Ueda K,Tabata H,Kawai T.Appl Phys Lett,2001;79: 988
[16]Singh P,Chawla A K,Kaur D,Chandra R.Mater Lett, 2007;61:2050
[17]Pease D M,Fasihuddin A,Daniel M,Budnick J I.Ultra- microscopy,2001;88:1
[18]Wang Z L,Yin J S,Jiang Y D.Micron,2000;31:571
[19]Liu Y Z,Xu Q Y,Schmidt H,Hartmann L,Hochmuth H, Lorenz M,Grundmann M,Han X D,Zhang Z.Appl Phys Lett,2007;90:154101
[20]Coey J M D,Venkatesan M,Fitzgerald C B.Nat Mater, 2005;4:173 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
