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PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS |
ZHAO Cheng;PENG Hongrui;LI Shizhi Qingdao Institute of Chemical Technology |
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Cite this article:
ZHAO Cheng;PENG Hongrui;LI Shizhi Qingdao Institute of Chemical Technology. PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS. Acta Metall Sin, 1993, 29(1): 87-92.
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Abstract Plasma chemical vapour deposited (PCVD) Ti-N-C films with different Cand N contents were examined, in comparison with C-free ones, by XPS, AES, XRD, SEMand microhardness testing. The PCVD Ti-N-C film may attribute its superior wear resist-ance to its high microhardness and dense structure. The variety of valence state of oxygenatoms adsorbed on Ti-N-C or TiN film surface was detected by AES and XPS analyses.Whether or not sufficient C atoms, existing in the lattice of the films seems to be decisive. Dif-ferent states of oxygen adsorbed may cause different modes of abrasive damage of film.
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Received: 18 January 1993
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