ZHAO Cheng;PENG Hongrui;LI Shizhi Qingdao Institute of Chemical Technology
Cite this article:
ZHAO Cheng;PENG Hongrui;LI Shizhi Qingdao Institute of Chemical Technology. PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS. Acta Metall Sin, 1993, 29(1): 87-92.
Abstract Plasma chemical vapour deposited (PCVD) Ti-N-C films with different Cand N contents were examined, in comparison with C-free ones, by XPS, AES, XRD, SEMand microhardness testing. The PCVD Ti-N-C film may attribute its superior wear resist-ance to its high microhardness and dense structure. The variety of valence state of oxygenatoms adsorbed on Ti-N-C or TiN film surface was detected by AES and XPS analyses.Whether or not sufficient C atoms, existing in the lattice of the films seems to be decisive. Dif-ferent states of oxygen adsorbed may cause different modes of abrasive damage of film.
YU Li; LIU Jiwen;ZHAO Jie; DAI Shaoxia;JIN Zhujing;WANG Huijun(State Key Laboratory of Corroston and Protection;Institute of Corroston and Protection of Metals; Chinese Academy of Sciences;Shenyang;110015)( Metallurgical College; Mianjing Universily;Tianjin 300400 )(Manuscript received 1995-12-06; in revised form 1996-09-02). EFFECT OF SUBSTRATE TEMPERATURE ON THE PROPERTIES OF ION PLATING TiN FILMS[J]. 金属学报, 1996, 32(12): 1270-1274.
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