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Acta Metall Sin  1991, Vol. 27 Issue (3): 150-153    DOI:
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AMORPHOUS FILMS OF ALUMINA PREPARED BY REACTIVE SPUTTERING
LOU Hanyi;ZHU Shenglong;WANG Fuhui;WU Weitao Corrosion Science Laboratory; Institute of Corrosion and Protection of Metals; Academia Sinica; Shenyang
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LOU Hanyi;ZHU Shenglong;WANG Fuhui;WU Weitao Corrosion Science Laboratory; Institute of Corrosion and Protection of Metals; Academia Sinica; Shenyang. AMORPHOUS FILMS OF ALUMINA PREPARED BY REACTIVE SPUTTERING. Acta Metall Sin, 1991, 27(3): 150-153.

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Abstract  The deposition processes of stoichiometric alumina by means of planar magne-tron dc reactive sputtering have been invastigated. The results indicate that the oxygen patialpressure (OPP) could dramatically affect the chemical composition and crystal structure of thedeposited films and two threthold values of the OPP (threthold pressures) exist during sputter-ing. If the OPP is lower than the threthold pressures the sputtered films are mainly compo-sed of metallic aluminium with little alumina in it. When the OPP is higher than the threth-old pressures the films are only composed of the alumina. When the OPP varies near thethrethold pressures, the total gas pressure, the sputtering voltage and the depositing rate appearadrupt change, and the V-I characteristic curves display different laws. The deposited aluminawere amerphous and could crystallize at high temperature. The dc reactive sputtering mecha-nisms were discussed in this paper.
Key words:  alumina film      amorphous film      reactive sputtering     
Received:  18 March 1991     
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https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y1991/V27/I3/150

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