DISCHARGE CHARACTERISTICS OF Ti AND FILM PREPARATION USING HYBRID HIGH POWER IMPULSE MAGNETRON SPUTTERING

doi:10.3724/SP.J.1037.2013.00744

Acta Metall Sin

2014, Vol. 50

Issue (7): 879-885 DOI: 10.3724/SP.J.1037.2013.00744

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DISCHARGE CHARACTERISTICS OF Ti AND FILM PREPARATION USING HYBRID HIGH POWER IMPULSE MAGNETRON SPUTTERING

LI Xiaochan^1,², KE Peiling¹(

), LIU Xincai³, WANG Aiying¹

1 Key Laboratory of Marine Materials and Related Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 3152012) Faculty
of Science, Ningbo University, Ningbo 3152113) School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211

Cite this article:

LI Xiaochan, KE Peiling, LIU Xincai, WANG Aiying. DISCHARGE CHARACTERISTICS OF Ti AND FILM PREPARATION USING HYBRID HIGH POWER IMPULSE MAGNETRON SPUTTERING. Acta Metall Sin, 2014, 50(7): 879-885.

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Abstract

Hybrid high power impulse magnetron sputtering (HIPIMS) is a new-generation HIPIMS technique with a pulse and dirrect current power supply parallelled connection operation. In this work, the influence of dirrect current from 0 to 4.0 A supplied by the dirrect current power is investigated on hybrid HIPIMS Ti discharge characteristics, plasma parameters (plasma potential, electron temperature and electron density) and Ti film properties in an Ar atmosphere. The results show that target voltage and current are characterized by a peak with variation of time in different dirrect currents. Although the target voltage is barely affected, the target current decreases with increasing the dirrect current during the pulse turn-on stage. The plasma parameters determined by a Langmuir probe have been significantly influenced by the dirrect current. Moreover, the deposition rate and average roughness increase while the hardness and elastic modulus have a slight decrease with the variation of dirrect current from 1.0 to 3.0 A. The samples are selected for comparison with that prepared by conventional direct current magnetron sputtering (DCMS) at the same average target power 650 and 1500 W. The results demonstrate that Ti films using hybrid HIPIMS have a close deposition rate and a superior quality and performance to those prepared using DCMS especially at the low target power 650 W when the direct current is 1.0 A.

Key words: hybrid high power impulse megnetron sputtering dirrect current discharge charicteristics Ti film

Received: 19 November 2013

ZTFLH:

TB751

Fund: Supported by National Basic Research Program of China (No.2013CB632302), National Natural Science Foundation of China (No.51375475) and Innovation Team Project of Ningbo (No.2011B81001)

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https://www.ams.org.cn/EN/10.3724/SP.J.1037.2013.00744 OR https://www.ams.org.cn/EN/Y2014/V50/I7/879

Fig.1 Schematic diagrams of hybrid high power impulse magnetron sputtering (HIPIMS) and conventional direct current magnetron sputtering (DCMS) deposition system (a) and a parallel connection operation mode of hybrid HIPIMS power supply (b) (L—inductive coil)

Fig.2 Langmuir probe current-voltage characteristic curve (V_s—plasma potential, I_es—saturated electron current)

Fig.3 Influence of coupling direct current (I_dc) on the Ti target voltage (a) and current (b)

Fig.4 Influence of I_dcon plasma potential V_s, electron temperature T_e (a) and plasma electron density N_e (b)

Fig.5 Influence of I_dc on the substrate current

Fig.6 Variation of deposition rates of Ti films with I_dc(a) and comparison of Ti films deposition rate between the hybrid HIPIMS and conventional DCMS (b) under different average target powers

Fig.7 Surface morphologies of Ti films prepared by the hybrid HIPIMS and conventional DCMS with different I_dc and average target power P

(a) hybrid HIPIMS, I_dc=1.0 A, P=650 W (b) hybrid HIPIMS, I_dc=3.0 A, P=1500 W

Fig.8 Average roughness of Ti films prepared by the hybrid HIPIMS with different I_dc (a) and comparison of average roughness of Ti films between the hybrid HIPIMS and conventional DCMS under different P (b)

Fig.9 XRD spectra of Ti films prepared by hybrid HIPIMS and conventional DCMS with different I_dc and P

Fig.10 Hardness (a), elastic modulus (b) of Ti films under different I_dc withthe hybrid HIPIMS and comparison of hardness (c), elastic modulus (d) of Ti films between the hybrid HIPIMS and conventional DCMS under different P

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