金属学报  2006, Vol. 42 Issue (5): 505-510

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溶胶-凝胶法制备的ZnO∶Al薄膜的微观结构及光学、电学性能

周宏明; 易丹青; 余志明;肖来荣;李荐;王斌

中南大学材料科学与工程学院

PREPARATION OF ALUMINIUM DOPED ZINC OXIDE FILMS AND THE STUDY OF THEIR MICROSTRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES

HongMing Zhou;;

中南大学材料科学与工程学院

周宏明; 易丹青; 余志明; 肖来荣; 李荐; 王斌 . 溶胶-凝胶法制备的ZnO∶Al薄膜的微观结构及光学、电学性能[J]. 金属学报, 2006, 42(5): 505-510 .
, , , , , . PREPARATION OF ALUMINIUM DOPED ZINC OXIDE FILMS AND THE STUDY OF THEIR MICROSTRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES[J]. Acta Metall Sin, 2006, 42(5): 505-510 .

摘要 参考文献 相关文章 Metrics 全文: PDF(1313 KB)   摘要: 采用溶胶-凝胶法制备了ZnO∶Al(AZO)透明导电薄膜.通过X射线衍射(XRD)、紫外-可见分光光度计(UV-Vis)、扫描电镜(SEM)和电阻测量装置, 考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响. 结果表明,退火温度越高, 多晶AZO薄膜的(001)晶面择优取向生长的趋势越强, 并且随退火温度升高,薄膜的晶粒尺寸增大, 透光率增加. 薄膜晶体结构为纯ZnO的六角纤锌矿结构. 在掺杂浓度1%(摩尔分数)、退火温度500℃及镀膜层数10的条件下, 得到了电阻率为3.2×10-3 Ω•cm、可见光区的平均透射率超过90%的AZO薄膜. 关键词 ： ZnO∶Al(AZO)薄膜,  溶胶-凝胶法     Abstract：Aluminium doped zinc oxide polycrystalline thin films (AZO) were prepared on microscope glass substrates by sol-gel dip-coating process. Zinc acetate solutions of 0.5 M in isopropanol stabilized by diethanolamine and doped with a concentrated solution of aluminium nitrate in ethanol were used. The quantity of aluminium in the sol was varied from 1 to 3 at. %, and the deposition times was varied from 5 to 15. Crystalline ZnO thin films were obtained following an annealing process at temperatures between 300℃ and 500℃ for 1 h. The coatings have been characterized by X-ray diffraction (XRD), optical spectroscopy (UV-Vis), scanning electron microscope (SEM), and electrical resistance measurement. With the annealing temperature increased from 300℃ to 500℃, the film was oriented more preferentially along the (0 0 2) direction, the grain size of the film increased, the transmittance also became higher and the electrical resistivity decreased. The X-ray diffraction analysis revealed single-phase ZnO hexagonal zincite structure. Optical transmittance over 90% in the near UV and VIS regions and electrical resistivity as low as 3.2×10-3 Ω·cm were obtained under such conditions, doping concentration 1 at. %, annealing temperature 500℃, deposition times 10. Key words： AZO film    Sol-gel    Microstructure    Preparation    Optical and electrical properties 收稿日期: 2005-09-01      ZTFLH:  TB383   服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 周宏明 易丹青 余志明 肖来荣 李荐 王斌 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y2006/V42/I5/505 [1] Nishino J, Kawarada T, Ohisho S, Saitoh H, Maruyama K, Kamata K. J Mater Sci Lett, 1997; 16: 629 [2] Ritala M, Asikanen T, LeskelaM, Skarp J. Mater Res Soc Symp Proc, 1996; 426: 513 [3] Wang R, King L L H, Sleight A W. J Mater Res, 1996; 11: 1659 [4] Gupta V, Mansingh A. J Appl Phys, 1996; 80: 1063 [5] Bertolotti M M, Laschena M V, Rossi M, Ferrari A, Qian L S, Quaranta F, Valentini A. J Mater Res, 1990; 5: 1929 [6] Schuler T, Aegerter M A. Thin Solid Films, 1999; 351: 125 [7] Hayamizu S, Tabata H, Tanaka H, Kawai T. J Appl Phys, 1996; 80: 787 [8] Anna Selvan J A, Keppner H, Shah A. Mater Res Soc Symp Proc, 1996; 426: 497 [9] Nakada T, Murakami N, Kunioka A. Mater Res Soc Symp Proc, 1996; 426: 411 [10] Szyszka B, Jager S. J Non-Cryst Solids, 1997; 218: 74 [11] Deschanvres J L, Bochu B, Joubert J C. J Phys, 1993; 3: 485 [12] Messaoudi C, Sayah D, Abd-Lefdil M. Phys Status Solidi, 1995; 151: 93 [13] Tokumoto M S, Smith A, Santilli C V, Pulcinelli S H, Elkaim E, Briois V. J Non-Cryst Solids, 2000; 273: 302 [14] Tokumoto M S, Smith A, Santilli C V, Pulcinelli S H, Craievich A F, Elkaim E, Traverse A, Briois V. Thin Solid Films, 2002; 416: 284 [15] Schuler T, Aegerter M A. Thin Solid Films, 1999; 351: 125 [16] Tokumoto M S, Pulcinelli S H, Santilli C V, Craievich A F. J Non-Cryst Solids, 1999; 247: 176 [17] Kamalasanan M N, Chandra S. Thin Solid Films, 1996; 288: 112 [18] Lee J H, Park B O. Thin Solid Films, 2003; 426: 94 [19] Jimenez G A E, Soto U J A. Sol Energy Mater Sol Cells, 1998; 52: 345 [20] Valle G G, Hammer P, Pulcinelli S H, Santilli C V. J Eur Ceram Soc, 2004; 24: 1009 [21] Silva R F, Zaniquelli M E D. J Non-Cryst Solids, 1999; 247: 248 [22] Ohyama M, Kozuka H, Yoko T. Thin Solid Films, 1997; 306: 78 [23] Talahashi Y, Kanamori M, Kondoh A, Minoura H, Ohya Y. Jpn J Appl Phys, 1994; 33: 6611 [24] Sernelius B E, Berggren K F, Jin Z C, Hamberg I, Granqvist C G. Phys Rev, 1998; 37: 10244 [25] Tang W, Cameron D C. Thin Solid Films, 1994; 238: 83 [26] Nanto H, Minami T, Shooji S, Takata S. J Appl Phys, 1984; 55: 1029 [27] Ohyama M, Kozuka H, Yoko T. J Ceram Soc Jpn, 1996; 104: 296 [28] Nunes P, Fortunato E, Tonello P, Braz F, Vilarinho P, Martins R. Vacuum, 2002; 64: 281 [29] Gray J. J Am Ceram Soc, 1954; 37: 534 [30] Sukkar M H, Tuller H L. Adv Ceram, 1984; 55: 71 [31] Ge C Q, Xia Z L, Guo A Y. Electron Components Mater, 2004; 23(9): 31 (葛春桥,夏志林,郭爱云．电子元件与材料,2004;23(9):31) [32] Tian M B, Liu D L. Manual of Membrane Science and Technology. Beijing: China Machine Press, 1991: 471 (田民波,刘德令．薄膜科学与技术手册,北京:机械工业出版 社,1991:471) [33] Major S, Banerjee A, Chopra K L. Thin Solid Films, 1984; 122: 31 [34] Meng Y, Lin J, Liu J, Shen J, Jiang Y M, Yang X L, Zhang Z J. Photoelectron Technol, 2001; 21: 89 (孟扬,林剑,刘键,沈杰,蒋益明,杨锡良,章壮健． 光电子技术,2001;21:89) [1] 高茜 孙本哲 祁阳 齐连仲. 溶胶--凝胶法制备的Zn1-xCoxO晶体粉末的结构和磁性行为[J]. 金属学报, 2011, 47(3): 337-343. [2] 厉英 马北越 王臻明 姜茂发. Na1.4Co2O4基热电材料的溶胶-凝胶法制备及表征[J]. 金属学报, 2011, 47(1): 109-114. Viewed Full text Abstract Cited   Shared      Discussed