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金属学报  2000, Vol. 36 Issue (1): 72-76     
  论文 本期目录 | 过刊浏览 |
透明导电氧化物ZnO:Al(ZAO)薄膜的研究
裴志亮 谭明晖
中国科学院金属研究所; 沈阳 110015
引用本文:

裴志亮; 谭明晖 . 透明导电氧化物ZnO:Al(ZAO)薄膜的研究[J]. 金属学报, 2000, 36(1): 72-76 .

全文: PDF(171 KB)  
摘要: 用磁控反应溅射法制备了ZnO:Al薄膜, 研究了薄膜方块电阻空间分布的均匀性及微观形貌, 并对ZnO:Al薄膜表面各元素的化学状态和深度分布进行了XPS和AES分析, 同时也讨论了薄膜的光学电学性能.
关键词 ZnO:Al薄膜电阻空间分布    
Key words
收稿日期: 1999-07-06     
ZTFLH:  O484 TN304.21  
[1] Chen M. PhD thesis, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang, 1999(陈猛.中国科学院金属研究所博士. 沈阳, 1999)
[2] Hartnaged H L, Dawar A L, Jain A K, Jagadish C. Semiconducting Transparent Thin Films. London, 1995
[3] Yang T L, Zhang D H, Ma J, Ma H L, Chen Y. Thin SolidFilms, 1998, 326: 60
[4] Neumann G. In: Kaldis E ed., Current Topics in MaterialScience, Vol. 7, Amsterdam: North Holland, 1981: 153
[5] Heiland G, Mollwo E, Stochmann F, Frederick S C, TurnbullD. Solid State Phys Advances in Research and Applications,Vol.8, New York: Academic Press, 1959: 191
[6] Islam M N, Ghosh T B, Chopra K L, Acharya H N. ThinSolid Film, 1996; 280: 20
[7] Fan J C C, Goodenough J B. J Appl Phys, 1977; 48: 3524
[8] Jiang X C, Hu Y. Vacuum, 1995; 6(1): 1(姜燮昌,胡勇.真空. 1995; 6(1): 1)
[9] Sato H, Minami T, Takata S, Mouri T, Ogawa N. ThinSolid Films, 1992; 230. 327
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