金属学报  1991, Vol. 27 Issue (3): 150-153

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反应溅射非晶态氧化铝薄膜

楼翰一;朱圣龙;王福会;吴维(?)

中国科学院金属腐蚀与防护研究所;中国科学院腐蚀科学开放研究实验室;中国科学院金属腐蚀与防护研究所;中国科学院腐蚀科学开放研究实验室;中国科学院金属腐蚀与防护研究所;中国科学院腐蚀科学开放研究实验室;中国科学院金属腐蚀与防护研究所;中国科学院腐蚀科学开放研究实验室

AMORPHOUS FILMS OF ALUMINA PREPARED BY REACTIVE SPUTTERING

LOU Hanyi;ZHU Shenglong;WANG Fuhui;WU Weitao Corrosion Science Laboratory; Institute of Corrosion and Protection of Metals; Academia Sinica; Shenyang

楼翰一;朱圣龙;王福会;吴维(?). 反应溅射非晶态氧化铝薄膜[J]. 金属学报, 1991, 27(3): 150-153.
, , , . AMORPHOUS FILMS OF ALUMINA PREPARED BY REACTIVE SPUTTERING[J]. Acta Metall Sin, 1991, 27(3): 150-153.

摘要 参考文献 相关文章 Metrics 全文: PDF(445 KB)   摘要: 研究了平面磁控直流反应溅射法沉积氧化铝薄膜的过程。结果表明氧分压大小对反应溅射过程有决定性作用,当氧分压增大或减小过程中存在两个阈值。氧分压小于阈值为金属Al溅射区,大于阈值为氧化铝溅射区。在阈值附近总气压、溅射电压和沉积速率发生突变,溅射特性(V-J)曲线有不同规律。沉积的氧化铝膜为非晶态,高温下可晶化,本文还讨论了反应溅射的机理。 关键词 ： 氧化铝膜,  非晶态膜,  反应溅射     Abstract：The deposition processes of stoichiometric alumina by means of planar magne-tron dc reactive sputtering have been invastigated. The results indicate that the oxygen patialpressure (OPP) could dramatically affect the chemical composition and crystal structure of thedeposited films and two threthold values of the OPP (threthold pressures) exist during sputter-ing. If the OPP is lower than the threthold pressures the sputtered films are mainly compo-sed of metallic aluminium with little alumina in it. When the OPP is higher than the threth-old pressures the films are only composed of the alumina. When the OPP varies near thethrethold pressures, the total gas pressure, the sputtering voltage and the depositing rate appearadrupt change, and the V-I characteristic curves display different laws. The deposited aluminawere amerphous and could crystallize at high temperature. The dc reactive sputtering mecha-nisms were discussed in this paper. Key words： alumina film    amorphous film    reactive sputtering 收稿日期: 1991-03-18      基金资助:国家自然科学青年基金 服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 楼翰一 朱圣龙 王福会 吴维(?) 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1991/V27/I3/150 1 Swaroop B, Meyer D E, White O W. J Vac Sci Technol, 1976; 13: 680 2 Koeniger M E, Reithmeier G. Simon M. Thin Solid Films, 1983; 109: 19 3 Nowicki R S. J Vac Sci Technol, 1977; 14(1) : 127 4 Demiryont H, Tezey N. Thin Solid Films, 1983; 101: 345 5 Morssinkhof R W. Fransen T, Heusinkveld M M, Gellings P J. Mater Sci Technol, 1989; A121: 449 6 Rosebury F. Handbook of Electron Tube and Vacuum Techniques. Reading Mass; Addison-Wesley, 1965: 475--476 7 Yosson J L, O'Neill J J, Finlayson K M, Royer L J. RCA Rev, 1970; 31: 293 8 Jones F, Logan J. J Vac Sci Technol. 1989; A7: 1240| [1] 王彬,熊良银,刘实. 射频反应溅射制备MgO二次电子发射薄膜*[J]. 金属学报, 2016, 52(1): 10-16. [2] 汪渊; 徐可为 . 反应磁控溅射MgO薄膜溅射模式的分形维表征[J]. 金属学报, 2003, 39(10): 1051-1054 . [3] 白海力; 姜恩永; 吴萍; 王怡; 王存达 . 对向靶反应溅射CN薄膜热稳定性的Raman散射研究[J]. 金属学报, 1999, 35(7): 762-766 . [4] 李美栓; 钱余海; 辛丽; 周龙江 . 用双面氧化弯曲方法测定Al2O3膜生长应力[J]. 金属学报, 1999, 35(6): 618-622 . Viewed Full text Abstract Cited   Shared      Discussed