金属诱导晶化基础与应用研究进展

doi:10.11900/0412.1961.2019.00187

金属学报

2020, Vol. 56

Issue (1): 66-82 DOI: 10.11900/0412.1961.2019.00187

综述

本期目录 | 过刊浏览

金属诱导晶化基础与应用研究进展

王祖敏¹(

),张安¹,陈媛媛¹,黄远¹,王江涌²

1. 天津大学材料科学与工程学院天津 300350
2. 汕头大学物理系汕头 515063

Research Progress on Fundamentals and Applications of Metal-Induced Crystallization

WANG Zumin¹(

),ZHANG An¹,CHEN Yuanyuan¹,HUANG Yuan¹,WANG Jiangyong²

1. School of Materials Science and Engineering, Tianjin University, Tianjin 300350, China
2. Department of Physics, Shantou University, Shantou 515063, China

引用本文:

王祖敏,张安,陈媛媛,黄远,王江涌. 金属诱导晶化基础与应用研究进展[J]. 金属学报, 2020, 56(1): 66-82.
Zumin WANG, An ZHANG, Yuanyuan CHEN, Yuan HUANG, Jiangyong WANG. Research Progress on Fundamentals and Applications of Metal-Induced Crystallization[J]. Acta Metall Sin, 2020, 56(1): 66-82.

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摘要:

将非晶半导体与金属相接触，可以诱导非晶半导体在极低的温度下结晶，这一现象被称为金属诱导晶化。薄膜状态的晶体半导体是用于众多先进技术中的关键材料，被广泛应用于微电子、光电子、显示技术和光伏技术等领域。金属诱导晶化为低温晶体半导体器件的制造、纳米多孔金属材料的合成以及金属材料界面工程提供了一种崭新的途径，引起了学术界和工业界的广泛关注。本文综述了金属诱导晶化的研究进展，对不同金属/非晶半导体体系中存在的金属诱导晶化现象进行了归纳分类总结，对其热力学原理和动力学机制进行了详细的计算与分析，突出了界面热力学在薄膜体系的固→固相变中的作用，最终阐明了金属诱导晶化过程的内在机理，并对金属诱导晶化过程未来的研究趋势进行了展望。

关键词 ：金属诱导晶化, 界面热力学, 金属/半导体体系, 固相反应, 对流传输

Abstract：

By contacting amorphous semiconductors with metals, amorphous semiconductors can be induced to transform into crystalline semiconductors at extremely low temperatures, a phenomenon known as metal-induced crystallization (MIC). Thin-film crystalline semiconductor is one of the key materials in many advanced technologies, and is widely used in the fields of microelectronics, optoelectronics, display technology and photovoltaic technology. MIC provides a new route for the production of crystalline semiconductor thin-films devices at low temperature, for fabrication of nanoporous metal materials and for interface engineering of metallic materials, and has therefore attracted wide interests from both academic and industrial communities. This paper reviews the current research progress of metal-induced crystallization of amorphous semiconductors at low temperatures, and the MIC behaviors in different metal/amorphous semiconductor systems are also classified and summarized. The thermodynamics and kinetics of MIC were calculated and analyzed in detail, highlighting the role of interface thermodynamics in the solid-solid phase transformation of thin-film systems. On this basis, the underlying mechanism of MIC has been elucidated. Finally, the future research trends of MIC are prospected.

Key words： metal-induced crystallization interface thermodynamics metal/semiconductor system solid-phase reaction convective transportation

收稿日期: 2019-06-06

ZTFLH:

TG111.5

基金资助:国家自然科学基金项目(51571148);国家重点研发计划项目(2017YFE0302600)

作者简介: 王祖敏，男，1979年生，教授，博士

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图1 非晶半导体材料浸润金属晶界的示意图[30]，及非晶Si和非晶Ge半导体浸润大角度Al晶界的界面热力学分析、非晶Si浸润大角度Ag和Au晶界的界面热力学分析[27]

图2 100 nm Al/150 nm非晶Si双层膜退火期间非晶Si浸润金属Al晶界过程的原位加热价带能量过滤式透射电子显微镜观测[33]

图3 非晶半导体在不同形核位点进行低温结晶的示意图，晶体Ge (或Si)在Al晶界和Al/非晶Ge (或者Al/非晶Si)界面处形核的界面热力学分析，及晶体Si在Ag晶界、Au晶界、Ag/非晶Si以及Au/非晶Si界面处形核的界面热力学分析[27]

图4 150 ℃退火处理的100 nm晶体Al/150 nm非晶Si双层膜中晶体Si在大角度Al晶界处形核过程的原位加热高分辨透射电子显微镜观察(截面方向)[33]

图5 金属诱导非晶Si和非晶Ge晶化过程中不同结晶行为的原位XRD观察[27]

图6 非晶SiGe在晶体Al/非晶SiGe界面和Al晶界处晶化时的界面能(γ')、体结晶能(ΔG)和形核临界厚度(hin??GB?crit、hinterf?crit)的界面热力学分析，在临界温度(约320 ℃)下晶体SiGe在晶体Al/非晶SiGe界面处发生晶化过程的示意图，及沉积态与不同温度(250~400 ℃)退火态的晶体Al/非晶SiGe样品的XRD谱[55]

图7 晶体Si或晶体Ge在Al晶界处初始形核完成后继续浸润晶界的界面热力学分析，及晶体Ge和晶体Si晶粒在原始Al层中(垂直于原始Al的晶界方向)连续横向生长的界面热力学临界厚度(hcrit)分析[27]

图8 150 nm非晶Si/100 nm Al双层膜在220和240 ℃退火时形核的晶体Si晶粒在Al底层横向生长的原位价带能量过滤式透射电子显微镜观察，及膜层交换的发生：Al亚层和Si亚层在280 ℃退火时交换了相互位置[34]

图9 相对于试样表面Ge层的法向和横向的电子背散射衍射图，及通过电子背散射衍射分析所计算出的试样的晶粒尺寸分布图[110]

图10 近室温条件下采用气相-晶界-固相(VGBS)法制备(半导体)晶体纳米网络的示意图[38]

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