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Cite this article:
. . Acta Metall Sin, 2007, 43(6): 599-602 .
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Abstract NiFe anisotropic magnetoresistive thin films were prepared by magnetron sputtering. AMR elements with thickness of 20 nm, length of 2.5 mm, and widths of 50, 20μm, 10μm, 5μm and 3μm, were patterned by using optical lithography and ion etching. The magnetoresistance effects of AMR elements were studied. Taking into account the non-uniform demagnetizing field along the width of AMR elements, magnetoresistance ratio was numerically obtained. The results have shown that the distribution of demagnetizing field and edge demagnetizing field depend on the width, which directly affect the magnetization switch. For smaller width, the edge demagnetizing field is stronger, which makes the magnetization switch more difficult. The magnetization switch in the center of AMR element first started, and ended in the edge.
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Received: 20 September 2006
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