|
|
PHASE FIELD CRYSTAL SIMULATION OF STRESS–INDUCED ANNIHILATION OF SUB–GRAIN BOUNDARY WITH DOUBLE–ARRAY DISLOCATION |
YANG Tao, CHEN Zheng, DONG Weiping |
State Key Laboratory of Solidification Processing, Northwestern Ploytechnical University, Xi’an 710072 |
|
Cite this article:
YANG Tao CHEN Zheng DONG Weiping. PHASE FIELD CRYSTAL SIMULATION OF STRESS–INDUCED ANNIHILATION OF SUB–GRAIN BOUNDARY WITH DOUBLE–ARRAY DISLOCATION. Acta Metall Sin, 2011, 47(10): 1301-1306.
|
Abstract The structure of symmetric tilt sub–grain boundary (SGB) and its annihilation mechanism under stress were modeled with the phase field crystal approach, including the analysis from two aspects of dislocation movement and system energy. In addition, the effects of temperature, misorientation and stress direction on SGB annihilation were also discussed. Simulated results show that the SGB is composed of double–array dislocations with a vertical distribution. The annihilation process generally contains four stages: dislocation climb, dislocation separation, another dislocation climb and separation again. The reduction of temperature hinders the process of annihilation. The SGB with a small misorientation annihilates earlier and faster than the one with a large misorientation. The annihilation differs under different stress conditions, and the compressive stress is favorable to the annihilation.
|
Received: 04 March 2011
|
|
Fund: Supported by National Natural Science Foundation of China (Nos.51075335, 10902086 and 50875217), Northwestern Ploytechnical University Foundation for Fundamental Research (No.NPU–FFR–JC201005) and Doctoral Foundation of Northwestern Ploytechnical University (No.CX201103) |
[1] Varma S K, Willits B L. Metall Trans, 1984; 15A: 1502[2] Lin Y X. Rare Met Mater Eng, 1992; 21: 30(林永新. 稀有金属材料与工程, 1992; 21: 30)[3] Hayakawa M, Yamaguchi K, Kimura M. Mater Lett, 2004; 58: 2565[4] Zhou L, Wei X Q, Zhou N G. Acta Metall Sin(Engl Lett), 2004; 17: 11[5] Bobylev S V, Gutkin M Y, Ovid’ko I A. Acta Mater, 2004; 52: 3793[6] Bobylev S V, Gutkin M Y, Ovid’ko I A. Appl Phys, 2004; 37D: 269[7] Caturla M J, Nieh T G, Stolken J S. Appl Phys Lett, 2004; 84: 598[8] Stefanovic P, Haataja M, Proatas N. Phys Rev, 2009; 80E: 046107[9] Liu X M, You X C, Liu Z L, Zhuang Z. Acta Metall Sin, 2008; 44: 1025(刘小明, 由小川, 柳占立, 庄茁. 金属学报, 2008; 44: 1025)[10] Wang C Y, Meng Q Y, Wang Y T. Acta Metall Sin, 2009; 45: 400(王超营, 孟庆元, 王云涛. 金属学报, 2009; 45: 400)[11] Elder K R, Katakowski M, Haataja M, Grant M . Phys Rev Lett, 2002; 88: 245701[12] Elder K R, Grant M. Phys Rev, 2004; 70E: 051605[13] Chen L Q, Shen J. Comput Phys Commun, 1998; 108: 147[14] Ren X, Wang J C, Yang Y J, Yang G C. Acta Phys Sin, 2010; 59: 3595(任秀, 王锦程, 杨玉娟, 杨根仓. 物理学报, 2010; 59: 3595)[15] Hirouchi T, Takaki T, Tomita Y. Comput Mater Sci, 2009; 44: 1192 |
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|