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SOLUBILITY CHARACTERISTICS OF GaAs IN Bi AND THEIR PHASE DIAGRAM |
FENG Shuifu;ZHOU Jicheng Shanghai Institute of Metallurgy; Academia Sinica Shanghai Institute of Metallurgy;Academia Sinica;Shanghai 200050 |
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Cite this article:
FENG Shuifu;ZHOU Jicheng Shanghai Institute of Metallurgy; Academia Sinica Shanghai Institute of Metallurgy;Academia Sinica;Shanghai 200050. SOLUBILITY CHARACTERISTICS OF GaAs IN Bi AND THEIR PHASE DIAGRAM. Acta Metall Sin, 1990, 26(2): 102-105.
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Abstract A modified liquid phase epitaxy apparatus for semiconductor materialswas used to measure the solubility of GaAs in Bi. The solubility of GaAs in Biand two phase diagrams rich in Bi under H_2 and N_2 atmosphere were obtained. Anew phenomenon, in which the parameters Q value (quantity of GaAs dissolved inBi in fixed time but various temperatures/saturated quantity of GaAs in Bi) weredifferent from each other and there existed a maximum Q value in particular tem-perature, was observed. This phenomenon can be recognized as a common feature ofa simple binary metallic system which has the phase diagram similar to that of Bi-GaAs. The difference observed from the dependence of Q values on temperature inboth H_2 and N_2 atmosphere was discussed.
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Received: 18 February 1990
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1 Rubenstein M. J Electrochem Soc, 1966; 113: 752 2 Hall R N. J Electrochem Soc, 1963; 110: 385 3 #12 4 冯水富,中国科学院上海冶金研究所硕士学位论文,1988 |
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