SYNTHESIS OF TiN FILM BY ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES
ZHOU Jiankun;LIU Xianghuai;CHEN Youshan;WANG Xi;ZHENG Zhihong;HUANG Wei;ZOU Shichang Shanghai Institute of Metallurgy. Academia Sinica Ion Beam Laboratory;Shanghai Institute of Metallurgy;Academia Sinica; Shanghai 200050
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ZHOU Jiankun;LIU Xianghuai;CHEN Youshan;WANG Xi;ZHENG Zhihong;HUANG Wei;ZOU Shichang Shanghai Institute of Metallurgy. Academia Sinica Ion Beam Laboratory;Shanghai Institute of Metallurgy;Academia Sinica; Shanghai 200050. SYNTHESIS OF TiN FILM BY ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES. Acta Metall Sin, 1990, 26(2): 136-141.
Abstract The TiN film was synthesized by alternate deposition of Ti and nitro-gen ion bombardment under 40 keV at room temperature. The component depthprofiles and the structure of the film have been investigated by means of RBS,AES, TEM, XPS and X-ray diffraction. The results showed that the TiN films syn-thesized by ion beam enhanced deposition (IBED) are mainly composed of TiNcrystallites, sized about 30-40 nm, with random orientation. The oxygen contaminationin TiN film prepared by IBED is less than that of the deposited film without nitrogenion bombardment. It was confirmed that there is a significant intermixed layer, about40nm thick, at the interfaces. The films formed by IBED exhibit superior hardnessand improvement over the wear resistance and frictiton properties.
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