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Acta Metall Sin  1993, Vol. 29 Issue (4): 77-80    DOI:
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PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION
JIANG Hai;TAO Kun;LI Hengde Tsinghua University. Beijing lecturer;Department of Materials Science and Engineering;Tsinghua University; Beijing 100084
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JIANG Hai;TAO Kun;LI Hengde Tsinghua University. Beijing lecturer;Department of Materials Science and Engineering;Tsinghua University; Beijing 100084. PREPARATION OF B-N FILMS BY ION BEAM ASSISTED DEPOSITION. Acta Metall Sin, 1993, 29(4): 77-80.

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Abstract  BN films, synthesized by ion beam assisted deposition, were analysed by RBS,AES, IR spectra and TEM. Formation of c-BN phase was shown not only by IR spectra atabsorption peak of 1100 cm~(-1), but also by electron diffraction pattern. The results of AESdemonstrate an effect of N~+ implantation near the film surface. The deposited films consist ofthree layers, i.e., ion implantation layer, film layer and mixed intermediate layer, according tothe difference of concentration. The micro-Knoop hardess of the film is 25-35 GPa.
Key words:  ion beam assisted deposition      BN film     
Received:  18 April 1993     

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https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y1993/V29/I4/77

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[3] JIANG Hai; WU Qinglan; TAO kun; LI Hengde(Tsinghua University; Beijing). FORMATION OF IRON NITRIDE FILMS BY ION BEAM ASSISTED DEPOSITION[J]. 金属学报, 1994, 30(18): 273-276.
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