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| THE APPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF BI-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY |
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| 东北大学理学院 |
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Cite this article:
;. THE APPLICATION OF HIGH-CONCENTRATION OZONE IN THE PREPARATION OF BI-BASED OXIDE THIN FILMS BY MOLECULAR BEAM EPITAXY. Acta Metall Sin, 2008, 44(6): 647-651 .
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Abstract A homemade ozone concentrating apparatus was devised and prepared, and the high-concentration ozone was prepared as oxide source for the preparation of Bi-based oxide thin films by molecular beam epitaxy. Silica gel was used to adsorb ozone which was made by ozone generator, and ozone with the concentration about 95 mol% can be obtained when the silica gel was kept at about -85℃ for 6 hours. And the concentration of ozone can be kept over 5 hours when the pressure of concentrating apparatus was kept at 1.3×103Pa. The X-ray diffraction patterns demonstrated that the high-concentration ozone gotten by the ozone concentrating apparatus can oxidize Cu to CuO in high vacuum. Furthermore, the oxide source was good enough to prepare high quality Bi2Sr2CuO6+x and Bi2Sr2CaCu2O8＋x thin films on the MgO(100) substrates by molecular beam epitaxy.
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Received: 08 November 2007
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