Acta Metall Sin  1995, Vol. 31 Issue (13): 31-34    DOI:

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STRUCTURE AND PROPERTIES OF TiN FILMS PREPARED BY FACING TARGETS SPUTTERING

LIU Yuguang; JIANG Enyong; CHENG Qi; SUN Changqing (Department of physics.Tianjin University. Tianjin 300072)(Manuscript received; 94-04-07)

LIU Yuguang; JIANG Enyong; CHENG Qi; SUN Changqing (Department of physics.Tianjin University. Tianjin 300072)(Manuscript received; 94-04-07). STRUCTURE AND PROPERTIES OF TiN FILMS PREPARED BY FACING TARGETS SPUTTERING. Acta Metall Sin, 1995, 31(13): 31-34.

Abstract References Related Articles Recommended Metrics Download:  PDF(274KB)  Export:  BibTeX | EndNote (RIS)       Abstract  The hardness (HV) of one of single-phase and (111) preferred orientation TiN films that were prepared by facing targets sputtering (FTS), is as high as 3800, the preferred orientation can change from ( 111 ) to (200) with the increase of substrate bias voltage, the lattice parameters vary with the pressure ratio of N_2 to Ar, the lattice expansion can be explained by the mechanism of interstitial N atom into the tetrahedral hole. Correspondent: LIU Yuguang. Lecturer, Department of physics, Tianjin University. Tianjin 300072 Key words:  TiN thin films      facing targets sputtering      texture cofficident      Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors URL:  https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y1995/V31/I13/31 1SundgrenJE．ThinSolidFilms,1985;128:212ValvodaV,KuzzlR,CernyR．ThinSolidFilms,1988:156:533孙长庆,姜恩永,刘裕光．天津大学学报,1889:4:934PerryAJ．ThinSolidFilms,1986:135:735McguireTR．JApplPhys,1977;48:76NicoletMA．ThinSolidFilms,1973;52:4157BunshanRF、NimmagaddaR,DunfordW．ThinSolidFilms,1978;54:858刘国纯,卞恒正．硬质合金,1991;8(2):20x No related articles found! No Suggested Reading articles found! Viewed Full text Abstract Cited   Shared      Discussed