[1] 邹元燨:金属学报,1956,1,127．
[2] Chou,Y.H.(邹元燨):Freiberger Forschungsh.,1957,B15,18．
[3] Carter,P.T.,Macfarlane,T.G.:J.Iron Steel Inst.,1957,185,54．
[4] Baird,J.D.,Taylor,J.:Trans.Faraday Soc.,1958,54,526．
[5] Yang,L.(杨琳),McCabe,C.L.,Miller,R.:Physical Chemistry of Steelmaking,(Wiley,1958) ,p.63．
[6] Sanbongi,K.,Omori,Y.:The Physical Chemistry of Metallic Solutions and Intermetallic Compounds,(National Physical Laboratory Symposium,1959) ,vol.2,6D,No.9,p.2．
[7] Langenberg,F.C.,Chipman,J.:Trans.AIME,1959,215,958．
[8] Kay,D.A.R.,Taylor,J.:Trans.Faraday Soc.,1960,56,1372．
[9] 三本木贡冶、大森康男:日本金属学会志,1961,25,(2) ,139．
[10] 邹元燨、金家敏等,未发表.
[11] 邹元燨、周继程,待发表。
[12] Chang,L.C.(张禄经):Doctorate Thesis,Department of Metallurgy,Carnegie Institute of Technology,1946．
[13] 坂上六郎:铁と钢,1953,39,587;39,688;39,1240．
[14] #12
[15] Sanbongi,K.,Ohtani,M.:Sci.Rept.Res.Inst.Tohoku Univ.,1952,A4,(1) ,59．
[16] Fulton,J.C.,Chipman,J.:Trans.AIME,1954,200,1136．
[17] Drowart,J.,De Maria,G.:Silicon Carbide,A High Temperature Semiconductor(Pergamon,1960) ,p.16．
[18] Scace,R.I.,Slack,G.A.:Silicon Carbide,A High Temperature Semiconductor,(Pergamon,1960) ,p.24．
[19] McCaffery,R.S.,Oesterle,J.F.:Trans AIME,1923,69,606．
[20] #12
[21] Darken,L.S.:Thermodynamics in Physical Metallurgy,(ASM.,1952) ,p.28．
[22] Taylor,C.R.,Chipman,J.:Trans AIME,1943,154,228．
[23] Richardson,F.D.:The Physical Chemistry of Melts,(IMM.,London,1953) ,p.75．
[24] Philbrook,W.O.,Goldman,K.M.,Helzel,M.M.:Trans.AIME,1950,188,361．
[25] 横山辰雄、冈俊平、尾崎圭介:日本工业化学会志,1952,555,64．
[26] #12
[27] #12
[28] #12
[29] Báák,T.:Acta Chem.Scand.,1955,9,1540．
[30] Bockris,J.O'M.,Lowe,D.C.:Proc.Roy.Soc.,1954,A226,423．
[31] #12
[32] Henderson,J.,Yang,L.(杨琳),Derge,G.:Trans.AIME,1961,221,56．
[33] McCoy,C.W.,Philbrook,W.O.:Trans.AIME,1958,212,226．
[34] 赵彭年、邹元燨,金属学报,1963,6,28．
[35] Chipman,J.:J.Am.Chem.Soc.,1961,83,1762． Chipman,J.:Trans.AIME,1961,221,1272．
[36] Arizabal,A.,McCabe,C.L.:J.Metals,1962,14,(1) ,87．
[37] 泽村 企好:铁と钢,1961,47,1873． |
