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Acta Metall Sin  2026, Vol. 62 Issue (8): 1357-1375    DOI: 10.11900/0412.1961.2025.00417
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Research Progress on the Preparation of Ultrafine Conductive Patterns Using Laser-Induced Transfer Technology
YUAN Kang1,2, CAO Wenxin2(), SUN Chunqiang1,2, WANG Zhuochao1,2, WANG Xiaoxiao2, ZHANG Yumin1, ZHU Jiaqi1,2()
1 Aerospace College, Harbin Institute of Technology, Harbin 150001, China
2 Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
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YUAN Kang, CAO Wenxin, SUN Chunqiang, WANG Zhuochao, WANG Xiaoxiao, ZHANG Yumin, ZHU Jiaqi. Research Progress on the Preparation of Ultrafine Conductive Patterns Using Laser-Induced Transfer Technology. Acta Metall Sin, 2026, 62(8): 1357-1375.

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Abstract  

The fabrication of ultrafine conductive patterns serves as a core enabling technology propelling the evolution of electronic devices toward miniaturization, flexibility, and high-density integration. Driven by the rapid development of emerging fields such as Internet of Things terminals, flexible wearable electronics, and microenergy devices, the demand for electronic devices in terms of pattern linewidth precision, cross-substrate compatibility, and complex structure adaptability continues to escalate. However, traditional fabrication techniques face inherent bottlenecks in balancing precision control, flexible adaptability, and cost-effective fabrication. Laser-induced transfer (LIT) technology, leveraging its unique advantages of high precision, noncontact processing, and broad material compatibility, has remarkably improved the resolution of ultrafine patterns and expanded cross-material adaptability. This technology provides an innovative technical solution for addressing traditional process bottlenecks in this domain. In recent years, LIT-related research has achieved substantial advancements in mechanistic elucidation, process optimization, and application extension. Nevertheless, a systematic review synthesizing its key progress and evolving trends is still lacking. Accordingly, this review systematically summarizes the current research status and future development directions of LIT technology for the fabrication of ultrafine conductive patterns. First, it traces the technological evolution of LIT from conceptual initiation to multifield practical applications, elaborating on the core transfer process of LIT and its inherent advantages in ultrafine conductive pattern fabrication. It subsequently delves into two major transfer mechanisms, namely, thermally dominated and momentum-transfer-driven mechanisms and systematically discusses the regulatory effects of critical process parameters (e.g., material intrinsic properties, laser process parameters, and the donor-receiver interface distance) on the quality of ultrafine conductive patterns. On this basis, this review conducts a comparative analysis of the performance characteristics and suitable application scenarios of multiple technical implementation routes, such as single-pulse transfer, multipulse superposition transfer, and integrated composite processes. Finally, this review systematically summarizes the typical application cases of LIT-fabricated ultrafine conductive patterns in fields including microelectronic circuit repair, high-performance sensor fabrication, flexible wearable electronics, and battery manufacturing.
Key words:  laser-induced transfer      ultrafine conductive pattern      micro-nano manufacturing     
Received:  22 December 2025     
ZTFLH:  TG665  
Fund: National Natural Science Foundation of China(52102039);National Natural Science Foundation of China(52032004);Aeronautical Science Foundation of China(2022Z065077001);Heilongjiang Provincial Key Research and Development Program(GA21D001);Heilongjiang Provincial Key Research and Development Program(2023T160156);Heilongjiang Provincial Key Research and Development Program(2022ZX06C05);Heilongjiang Provincial Key Research and Development Program(2024ZX12C08);Heilongjiang Provincial Key Research and Development Program(GJLX20240001)
Corresponding Authors:  ZHU Jiaqi, professor, Tel: (0451)86417970, E-mail: zhujq@hit.edu.cn; CAO Wenxin, professor, Tel: 15945677968, E-mail: caowenxin@hit.edu.cn
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YUAN Kang
CAO Wenxin
SUN Chunqiang
WANG Zhuochao
WANG Xiaoxiao
ZHANG Yumin
ZHU Jiaqi

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https://www.ams.org.cn/EN/10.11900/0412.1961.2025.00417     OR     https://www.ams.org.cn/EN/Y2026/V62/I8/1357

Fig.1  Schematics of setups for laser-induced forward transfer (LIFT) technology (a) and laser-induced backward transfer (LIBT) technology (b); and dispersion and deposition processes (c) and explosive transfer process (d) of laser-induced donor material[14] (This schematic simplifies the optical path to highlight the core transfer mechanisms. In practical implementations of laser-induced transfer (LIT) technology, a laser focusing optical path is always involved to ensure energy concentration and transfer precision)
Comparison dimensionLIFTLIBT
Transparency requirement for donor substrateLaser→passes through transparent donor substrate→acts on donor material→material is transferred forward to the receiver substrateLaser→directly irradiates the surface of donor material→material is transferred backward to the receiver substrate
Requirement for donor substrateMust be transparent (e.g., glass, quartz) and compatible with laser penetration characteristicsNo mandatory requirement; no reliance on transparent donor substrate
Requirement for receiver substrateNo mandatory requirement; selectable based on application scenariosNo mandatory requirement; selectable based on application scenarios

Device complexity

Relatively high; requires supporting transparent donor substrate and precise optical path calibration systemRelatively low; eliminates the need for transparent donor substrate and related optical path adaptation components, featuring a simpler structure and reduced difficulty in optical path calibration

Core advantage

Compatible with various donor material systems, offering broad compatibility

Simplified device structure, lower cost, compatible with opaque donor materials, and avoids material limitations and losses caused by transparent substrates
Table 1  Comparisons of core devices and optical paths of LIFT and LIBT technologies[13-15]
Fig.2  Development history of LIT technology (DNA—deoxyribonucleic acid, NWs—nanowires, NP—nano particles, LED—light emitting diode, MAPLE-DW—matrix-assisted pulsed laser evaporation direct write, DR-LIFT—dynamic release LIFT, TP-DRL—triazene polymer dynamic release layer)
Technical variantEnergy transfer mechanismCore problem addressedExpansion of application fieldRef.
MAPLE-DWMatrix vaporization generates moderate vapor pressurePhase-change damage of heat-sensitive materialsOrganic semiconductors, bio-inks[21]
DR-LIFTPlasma expansion of the metal absorption layer generates pressure wavesDirect photothermal damage of materialsMicrofluidic chips, diagnostic sensors[22]
TP-DRLPhotodecomposition of polymers releases gases to generate shock wavesThermal degradation of organic materialsOLED, QLED displays[23]
BA-LIFTPolymer bubble expansion drives fluid flowSplash control for high-resolution fluid transferFlexible circuits, transparent electrodes[24]
Table 2  Summary of the core mechanisms of technical breakthroughs in common LIT technology[21-24]
Fig.3  Energy transfer through the surface and meltpools[39]
Material typeTransfer characteristicKey parameter and caseRef.

Metal thin film

Dominated by melting-solidification phase transformation, with control over thermal diffusion length

Au nanoparticles (60 nm film thickness): 30 fs, 78 nJ, 800 nm diameter;

Cu-Ag alternating layers (4 layers, total thickness ≈ 500 nm): 532 nm laser wavelength, 1 ns, 5 μJ, 10 μm transferred voxel diameter

[53,54]

Biological material

Protected by DRL, enabling low-damage transfer

cDNA: 355 nm laser wavelength, 10 ns, 0.5 μJ, 40 μm spot diameter; peptide microarray (SLEC matrix, 10% w/w): 405 nm laser wavelength, 7 ms, 90 mW, 110 μm fluorescent spot diameter

[55,56]

Semiconductor

Non-linear ionization and lattice reconstruction, relying on beam shaping

Si NPs: 800 nm laser wavelength (linear absorption) to obtain 205 nm particles;

silicon semiconductor components (100 μm × 100 μm × 90 μm): 355 nm laser wavelength, 10 ns, 245-700 mJ·cm-2

[57,58]

Conductive polymer

Sacrificial layer absorbs laser to generate gasification for propulsion, with low-temperature transfer protecting functional groups

PVP/5%f-MWCNT composite material (on Al micro-electrodes): 266 nm laser wavelength, 220 mJ·cm-2, 30 μm × 40 μm pixels;

PEDOT:PSS:GO composite film (80 nm thickness): 193 nm laser wavelength, 15 ns, 450 mJ·cm-2

[59,60]

Liquid ink

Bubble-jet fluid dynamics, breaking through viscosity/particle limitations

Silver paste (50 μm thickness): 532 nm laser wavelength, 15 ns, 3.2 J·cm-2, 70 μm diameter; silver screen printing ink (80 μm film thickness): 1064 nm laser wavelength, 100 ns, 60 μJ, 160 μm voxel diameter

[61,62]

3D structure

Droplet stacking, with optimized interface bonding

Cu pillar (diameter less than 5 μm, length 2 mm): 515 laser wavelength, 6.7 ps, vertical interconnection TS;

Au cantilever ( width × thickness × length = 50 μm × (10-20) μm × (450-800) μm): 532 nm laser wavelength, 0.8 ns, 4 μJ

[63,64]
Table 3  Material compatibilities and transfer mechanisms for common LIT-used materials[53-64]
Fig.4  High (a-e) and low (f-j) magnified SEM images of surface morphologies of magnetron-sputtered Ag thin films with different thicknesses, and corresponding 3D roughness maps (k-o)[65] (Rz—surface roughness)
Fig.5  Dynamic processes of bubble formation and silver paste transfer under different laser energies[73] (dg—transfer gap, r1—radius of the laser-induced bubble, r2—radius of the silver paste front profile. (I) represents formation of the small bubble under initial laser irradiation; (II) represents hemispherical expansion or unstable fragmentation of the bubble in the direction normal to the surface during evolution, and non-contact or contact shown between the acceptor and the bubble; (III) represents the bubble no longer expanded after laser irradiation was terminated and detachment of the acceptor away from the donor substrate; (IV) represents solidification of the formed line after the separation of donor and acceptor)
Fig.6  Morphological characteristics of deposition spots in 80 nm-thick copper films with different donor-receptor spacings (ΔZ)[77]
Fig.7  Low (a) and high (b) magnified SEM images of LIFT printed copper metal pillar array (7 × 10 pillars) with a width of 9 µm and a height of 106 µm[84]; SEM images and schematics of fluid LIFT and an Ag pillar (c) and solid LlFT and a Cu pillar (d)[85]
Fig.8  Continuous wave laser realizing the transfer and synchronous sintering of metal nano-Ag[86] (a); cross-sectional SEM image of the Cr grain layer deposited on a glass substrate by LIFT and electroless plating methods[87] (b); and schematic of nanoparticle structure fabrication by a combination of the nanosphere lithography and LIT[88] (c)
Fig.9  Application fields of LIT preparation of ultrafine conductive patterns
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