金属学报  1988, Vol. 24 Issue (3): 229-235

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等离子体化学气相沉积TiN膜的研究

李世直;徐翔

青岛化工学院固体薄膜研究室;教授;青岛化工学院

PLASMA CHEMICAL VAPOR DEPOSITED TiN FILMS

LI Shizhi;XU Xiang Qingdao Institute of Chemical Technology; Qingdao; ShandongProfessor;Thin Solid Films Lab.;Qingdao Institute of Chemical Technology;53 Zhengzhou Road; Qingdao; Shandong

李世直;徐翔. 等离子体化学气相沉积TiN膜的研究[J]. 金属学报, 1988, 24(3): 229-235.
, . PLASMA CHEMICAL VAPOR DEPOSITED TiN FILMS[J]. Acta Metall Sin, 1988, 24(3): 229-235.

摘要 参考文献 相关文章 Metrics 全文: PDF(2012 KB)   摘要: 采用直流等离子体化学气相沉积技术,在高速钢、Si(100)和Si(111)基体上沉积TiN膜,并对膜的晶体结构、表面形貌、断口结构、显微硬度、氯含量等进行了测定和分析,部分样品进行了二次离子质谱(SIMS)、Auger谱(AES)和X光光电子谱(ESCA)等分析.试验表明:在不同基材上沉积的TiN膜,只要沉积参数相同,膜的结构和性能都相同.在沉积温度500℃左右,TiN膜的生长方式有一转变,即可能是由层生长转变为岛状生长.直流PCVD法生成的TiN膜,其N:Ti≈1:1,有强的(200)织构,膜与基体间有较宽的共混区,因而结合强度高和耐磨性好,适于用作耐磨镀层. 关键词 ： 等离子体化学气相沉积,  TiN膜     Abstract：TiN films were deposited onto high speed steel, Si(100) and Si(111) substrates using D. C. PCVD method. The crystallographic structure, surfacemorphology, fracture cross section, microhardness and the chlorine content of thePCVD TiN films were studied. Part of the samples were analyzed using SIMS, AESand ESCA. Experimental results indicated that the structure and properties of theTiN films on different substrates were almost the same when the same depositionparameters were used. At about 500℃, the mode of the film growth undergoes achange probably from layer growth to island growth. The PCVD TiN films had aratio N/Ti of 1, and revealed strong (200) texture. A mixed region existed betweenthe films and the substrates. It could be concluded that PCVD TiN films show goodadherence and excellent wear resistant properties, and are suitable for anti-frictioncoating. Key words： plasma chemical vapor deposition    TiN film 收稿日期: 1988-03-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 李世直 徐翔 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1988/V24/I3/229 1 Li Shizhi, Huang Wu, Yang Hongshun, Wang Zhongshu. Plasma Chemistry and Plasma Processing 1984; 4: 148 2 Archer N J. Thin Solid Films, 1981; 80: 221 3 Rosler R S, Benjing W C, Baldo J. Solid State Technol, 1976; 19: 45 4 Bachmann P. In: Timmermans C J ed., 7th Int Symp Plasma Chemistry, Vol. 1, Eindhoven, The Netherlands, 1985: 7 5 土居阳,村上义夫.真空,1985;28:213 6 徐翔,谢雁,赵程,李世直.真空科学与技术,1985;5:77 7 #12 8 Thornton J A. Ann Rev Mater Sci, 1977; 7: 239 9 Veprek S., Thin Solid Films, 1985; 130: 135 10 Veprek S. In: Kaldis E ed., Current Topics in Materials Science Vol. 4, Amsterdam: North-Holland, 1980: 151 11 王兴源.青岛化工学院学报,1980;1:48 12 杨洪顺,李世直.(未发表结果) 13 Vook R W. Int Metall Rev, 1982; 27: 209 14 Li Shizhi, Yang Hongshun. In: Timmermans C J ed., 7th Ini Symp Plasma Chemistry, Vol. 1, Eindhoven, The Netherlands, 1985: 68 15 石玉龙,李世直.青岛化工学院学报,1988;1: 16 Sundgren J-E. Ttin Solid Films, 1985; 128: 21 17 Matthews A, Lefkow A R. Thin Solid Films, 1985; 126: 283 [1] 覃明; 嵇宁 . TiN 附着膜的应力-应变关系[J]. 金属学报, 2003, 39(7): 721-724 . [2] 谢飞; 何家文 . 高速钢W18Cr4V离子渗氮层组织对TiN膜与基体结合强度的影响[J]. 金属学报, 2000, 36(10): 1099-1103 . [3] 于力;刘技文;赵杰;戴少侠;金柱京;王慧君. 基材温度对离子镀TiN膜性能的影响[J]. 金属学报, 1996, 32(12): 1270-1274. [4] 刘捍卫;陈元儒;张绪寿. 离子束辅助沉积TiN膜的摩擦学特性[J]. 金属学报, 1994, 30(19): 323-326. [5] 赵程;彭红瑞;李世直. 等离子体化学气相沉积Ti-N-C膜的研究[J]. 金属学报, 1993, 29(1): 87-92. Viewed Full text Abstract Cited   Shared      Discussed