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金属学报  1987, Vol. 23 Issue (3): 188-194    
  论文 本期目录 | 过刊浏览 |
重掺Sb的Si单晶生长过程中熔体内Sb浓度变化规律
佘思明;成钧
中南工业大学;中南工业大学
VARIATION OF Sb CONCENTRATION IN MELT DURING GROWTH OF HEAVILY Sb-DOPED Si SINGLE CRYSTAL
SHE Siming; CHENG Jun (Central South University of Technology; Changsha) (Manuscript received 13 January; 1985; revised manuscript 21 December; 1985)
引用本文:

佘思明;成钧. 重掺Sb的Si单晶生长过程中熔体内Sb浓度变化规律[J]. 金属学报, 1987, 23(3): 188-194.
, . VARIATION OF Sb CONCENTRATION IN MELT DURING GROWTH OF HEAVILY Sb-DOPED Si SINGLE CRYSTAL[J]. Acta Metall Sin, 1987, 23(3): 188-194.

全文: PDF(495 KB)  
摘要: 本文建立了描述重掺Sb的si单晶生长过程中熔体内Sb浓度变化规律的数学模型。用该模型计算的理论曲线与实验曲线一致。结果表明,减压拉晶能有效地控制拉晶过程中由于溶质分凝造成的熔体内Sb浓度的增加,从而能大大地推迟“析出”。当炉膛压力大约减至2.7kPa时,能保持熔体中Sb浓度几乎不变。
Abstract:A mathematical model has been established for the character of the variation of Sb concentration in the melt during the growth process of heavily Sb-doped Si single crystal. The calculated curve drawn with the model is in good agreement with the experimental one. As a result of the segregation of the solute during pulling, the concentration of Sb in the melt increases. It is found from the calculated curves that the increase of Sb concentration can be brought under control while the pulling process was carried out under a reduced pressure. Thus, the formation of cellular interface could be postponed. As the pressure in a furnace decreases to 2.7 kPa, the Sb concentration will be kept almost unchanged.
收稿日期: 1987-03-18     
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