金属学报  1985, Vol. 21 Issue (1): 81-85

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LEC法GaAs中的Si与液封剂B_2O_3,H_2O间的相互作用

章敏权;邹元爔;方敦辅

中国科学院上海冶金研究所;中国科学院上海硅酸盐化学与工学研究所;中国科学院上海冶金研究所;中国科学院上海冶金研究所

INTERACTION AMONG Si IN LEC GaAs AND B_2O_3 AND H_2O IN THE ENCAPSULANT

ZHANG Minquan;ZOU Yuanxi(Chou Yuanhsi);FANG Dunfu Shanghai Institute of Metallurgy;Academia Sinica

章敏权;邹元爔;方敦辅. LEC法GaAs中的Si与液封剂B_2O_3,H_2O间的相互作用[J]. 金属学报, 1985, 21(1): 81-85.
, , . INTERACTION AMONG Si IN LEC GaAs AND B_2O_3 AND H_2O IN THE ENCAPSULANT[J]. Acta Metall Sin, 1985, 21(1): 81-85.

摘要 参考文献 相关文章 Metrics 全文: PDF(364 KB)   摘要: 本文利用文献报道的LEC法GaAs晶体中的Si,B的红外LVM吸收光谱和SIMS分析数据,作出三条lg[Si]-lg[B]直线,其斜率分别接近于4/3,2/3,1/2.本文结合晶体生长的不同工艺条件试用熔体中Si与B_2O_3,H_2O间的相互作用,解释斜率的差异. Abstract：Three straight lines have been obtained by plotting[Si]vs[B]in LEC GaAson the basis of infrared LVM absorption spectra and SIMS data reported in therecent literature.The difference in slope of the lines is discussed from the point ofview of the difference in the crystal growth technique used by various investi-gators. 收稿日期: 1985-01-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 章敏权 邹元爔 方敦辅 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1985/V21/I1/81 1 Newman,R.C.;Thompson,F.;Hyliands,M.;Peart,R.F.,Solid State Commun.,10(1972) ,505． 2 Morrison,S.R.;Newman,R.C.;Thompson,F.,J.Phys.C:Solid State Phys.,7(1974) ,633． 3 Bass,S.J.;Oliver,P.E.,1966 Gallium Arsenide,Inst.Phys.Conf.Ser.№ 3,1967,p.41． 4 Mullin,J.B.;Royle,A.;Straughan,B.W.;Tufton,P.J.;Williams,E.W.,J.Cryst.Growth,13/14(1972) ,640． 5 Weiner,M.E.;Lassota,D.T.;Schwartz,B.,J.Electrochem.Soc.,118(1971) ,301． 6 Mullin,J.B.;Crystal Growth and Characterization,Eds.Ueda,R.;Mullin,J.B.,1975,p.75． 7 Henry,R.L.;Swiggard,E.M.,1976 Gallium Arsenide and Related Compounds(St.Louis),Inst.Phys.Conf.Ser.No,33b,1977,p.28． 8 Thompson,F.;Newman,R.C.,J.Phys.C:Solid State Phys.,5(1972) ,1999． 9 Oliver,J.R.;Fairman,R.D.;Chen,R.T.;Yu,P.W.,Electron.Lett.,17(1981) ,839． 10 Fairman,R.D.;Chen,R.T.;Oliver,J.R.;Ch'en,D.R.,IEEE Trans.Electron Devices,ED 28(1981) ,135． 11 Laithwaite,K.;Newman,R.C.;Angress,J.F.;Gledhill,G.A.,1976 Gallium Arsenide and Related Compounds(Edinburgh),Inst.Phys.Conf.Ser.№ 33a,1977,p.133． 12 Hobgood,H.M.;Eldridge,G.W.;Barrett,D.L.;Thomas,R.N.,IEEE Trans.on Electron Devices,ED-28(1981) ,140． 13 Chang,C.E.;Wilcox,W.R.,Mater.Res.Bull.,6(1971) ,1297． 14 Groves,S.H.;Plonko,M.C.,1978 Gallium Arsenide and Related Compounds,Inst.Phys.Conf.Ser.№ 45,1979,p.71． 15 Von Franz,H.,Glastech.Ber.,38(1965) ,54． No related articles found! Viewed Full text Abstract Cited   Shared      Discussed