金属学报  1981, Vol. 17 Issue (6): 635-642

论文 本期目录 | 过刊浏览 |

金属薄膜的电迁移激活能

武蕴忠;孙承龙

中国科学院上海冶金研究所;中国科学院上海冶金研究所

ACTIVATION ENERGY OF ELECTROMIGRATION IN THIN METAL FILMS

Wu Yunzhong and Sun Chenglong (Shanghai Institute of Metallurgy; Academia Sinica)

武蕴忠;孙承龙. 金属薄膜的电迁移激活能[J]. 金属学报, 1981, 17(6): 635-642.
, . ACTIVATION ENERGY OF ELECTROMIGRATION IN THIN METAL FILMS[J]. Acta Metall Sin, 1981, 17(6): 635-642.

摘要 参考文献 相关文章 Metrics 全文: PDF(514 KB)   摘要: 电迁移过程中试样内非平衡缺陷的积累使电阻增大,其电阻变化率为:d(ΔR/R_0)/dt=cmj~2ρ~(3/2)Z_i~*eD_0/λ~(1/2)kT exp(-Q/kT)和d(ΔR/R_0/dt)=c_1mj~2ρ~(3/2)Z_i~*eD_0(2(T-T_e)+α(T-T_e)~2)~(1/2)/λ~(1/2)kT exp(-Q/kT) 用此二式可精确确定金属薄膜的电迁移激活能。用第一式确定的Al-3.2％Cu合金薄膜的电迁移激活能Q=0.65±0.04eV;用第二式处理Hummel的实验结果,则纯Al薄膜的Q值与原作者一致。 Abstract：The accumulation of non-equilibrium defects in the thin metal films during electromigration may cause to increase their resistance. The change of the resistivity has been derived as either of the following equations:d(ΔR/R_0)/dt=cmj~2ρ~(3/2)Z_i~*eD_0/λ~(1/2)kT exp(-Q/kT) and d(ΔR/R_0)/dt=c_1mj~2ρ~(3/2)Z_i~*eD_0(2(T-T_e)+α(T-T_e)~2)~(1/2)/λ~(1/2)kT exp(-Q/kT) by which the activation energy of elecromigration, Q, in the thin metal films is quite easily determined. For example, in the Al-3.2％ Cu alloy stripe, Q=0.65±0.04 eV, calculated by the former equation; and in pure Al film, Q is agreed to the Hummel's result, after treated his data and calculated by the later one. 收稿日期: 1981-06-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 武蕴忠 孙承龙 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1981/V17/I6/635 [1] Black, J. R., Proc. IEEE, 57 (1969) , 1587． [2] Blech, I. A. and Meieran, E. S., J. Appl. Phys., 40 (1969) , 485． [3] Berenbaum, L., J. Appl. Phys., 42 (1971) , 880． [4] Howard, J. K. and Ross, R. F., Appl. Phys. Lett., 18 (1971) , 344． [5] Rosenberg, R. and Berenbaum, L., Appl. Phys. Lett., 12 (1968) , 200． [6] Hummel, R. E., Dehoff, R. T. and Geier, H. J., J. Phys. Chem. Solids, 37 (1976) , 73． [7] d'Heurle, F. M. and Rosenberg, R., Physics of Thin Films, Vol, 7, Ed. by G. Hoss, M. H. Francombe, and R. W. Hoffman, Academic Press, New York, and London, 1973, p. 257． [8] Herzig, C. and Wiemann, W., Phys. Status Sotidi,(α) 26 (1974) , 459． [9] Agarwala, B, N., Attardo, M. J. and Ingraham, A. P., J. Appl. Phys., 41 (1970) , 3954． [10] Huntington, H. B. and Grone, A. R., J. Phys. Chem. Solids, 20 (1961) , 76． [11] Chaung, Y. S. and Huang, H. L. J. Appl. Phys., 47 (1976) , 1775． [12] Shine, M. C. and d' Heurle, F. M., IBM J. Res. Dev., 15 (1971) , 378． [13] d' Heurle, F. M., Ainslie, N. G., Gangulee, A. and Shine, M. C., J. Vac. Sci. Technol., 9(1972) , 289．" No related articles found! Viewed Full text Abstract Cited   Shared      Discussed