金属学报  1980, Vol. 16 Issue (3): 308-373

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GaAs气相掺杂外延的研究

彭瑞伍;孙裳珠;沈松华

中国科学院冶金研究所;中国科学院冶金研究所;中国科学院冶金研究所

AN INVESTIGATION ON THE VAPOUR PHASE EPITAXY OF DOPED GaAs

Peng Ruiwu;Sun Shangzhu;Shen Songhua Shanghai Institute of Metallurgy; Academia Sinica

彭瑞伍;孙裳珠;沈松华. GaAs气相掺杂外延的研究[J]. 金属学报, 1980, 16(3): 308-373.
, , . AN INVESTIGATION ON THE VAPOUR PHASE EPITAXY OF DOPED GaAs[J]. Acta Metall Sin, 1980, 16(3): 308-373.

摘要 参考文献 相关文章 Metrics 全文: PDF(1399 KB)   摘要: 本文用Ga-AsCl_3-H_2体系在改进的外延设备上生长了GaAs掺杂外延片.文中研究了GaAs气相掺杂过程并评价了外延层的质量.对掺杂外延时的表面形貌、生长速率、电子迁移率、击穿电压、横向浓度均匀性、纵向浓度分布、缺陷和外延重现性等参数进行了讨论.结果表明,所得外延片具有较好的质量,已用于制作微波器件,如变容管和开关管等. Abstract：Epitaxial layers of doped GaAs have been prepared from a Ga/AsCl_3/H_2 systemin an improved epitaxial apparatus and the vapour-phase doping process of the GaAshas been investigated. The quality of these layers thus obtained was found to besatisfactory and they are used in making microwave devices such as variators andswitches. Discussions on a variety of factors including surface morphology, growthrate, electronic mobility, breakdown voltage, doping uniformity across a wafer,doping profile, defects and reproducibility of the epitaxy were made. 收稿日期: 1980-03-18      服务 把本文推荐给朋友 加入引用管理器 E-mail Alert RSS 作者相关文章 彭瑞伍 孙裳珠 沈松华 44.8K 链接本文: https://www.ams.org.cn/CN/      或      https://www.ams.org.cn/CN/Y1980/V16/I3/308 [1] Luther, L. C. and Dilorenzo, J. V., J. Electrochem. Soc., 122(1975) , 760． [2] Bachem, K. H. and Bruch, H., J. Electrochem. Soc., 122 (1975) , 1000． [3] Dilorenzo, J. V., J. cryst. Growth, 17 (1972) , 189． [4] Nakanisi, T. and Kasiwagi, M., Jap. J. Appl. Phys., 13 (1974) , 484． [5] Dyment, J. C. and Rozgonyi, G. A., J. Electrochem. Soc., 118 (1971) , 1346． [6] #12 [7] Nakagawa, M. and Ikoma, H., Jap. J. Appl. Phys., 10 (1971) , 1345． [8] Sze, S. M., Physics of Semiconductor Devices, John Wiley and Sons Inc., 1969． [9] Rode, D. L. and Knight, S., Phys. Rev., 3B (1971) , 2534． [10] Wolfe, C. M., Stillman, G. E. and Lindley, W. T., J. Appl. Phys., 41 (1970) , 3088． [11] Hilsum, C., Rose-Inne, A.C., Semiconducting Ⅲ-Ⅴ Compounds, International Series of Monographs on Semiconducfors, 1961． Pergamon, New York, p.140． [12] Poth, H., Bruch, H., Heyen, M. and Balk, P., J. Appl. Phys., 49 (1978) , 285． [13] Wolfe, C. M., Stillman, G. E. and Dimmock, J. C., J. Appl. Phys., 41 (1970) , 504． [14] Wolf, C. M. and Stillman, G. E., Solid State Commun., 12 (1973) , 283． [15] #12 [16] Kressel, H., RCA Review, 28 (1967) , 175． [17] Wolfe, C. M., 1968 Proceedings of 2nd International Symposium on GaAs and Related Composition, London and Aristol, Inst. Phys., 1970． [18] Fairman, R. O. and Soloman, K., J. Electrochem. Soc., 120 (1973) , 541． [19] Grove, A. S., Roder, A. and San, C. T., J. Appl. Phys., 36 (1965) , 802． [20] Seto, H. and Iida, S., Jap. J. Appl. Phys., 9 (1970) , 156． [21] Richard, D. F., J. Electrochem. Soc., 122 (1975) , 800． [22] Faktor, M. M. and Stevenson, J. L., J. Electrochem. Soc., 125 (1978) , 621． [23] Green, L. I., J. Appl. Phys., 48 (1977) , 3739． [24] Bachem, K. H., Erlaki, G. and Markert, W., Proceedings of the 4th International Conference on Chemical Vapour Deposition 1973, p. 296． [25] #12 [26] Don Shaw, W., in "Extended Abstracts", vol. 77--2, N 327, p. 862, The Electrochemical Society Fall Meeting, Atlanta, Georgia, 1977．p No related articles found! Viewed Full text Abstract Cited   Shared      Discussed