Magnetron sputtering ion plating (MAIP) is limited by the low density and low ionization of target atoms, which results in that the films deposited by MAIP have poor compactness, low adhesion and the quick decreasing in thickness along the target-to-substrate distance, so this disadvantages of the film quality and property can not satisfy the harsh need of modern society. Based on the physical gas discharging plasma theory, the gas discharge could be introduced into the glow-arc discharge section between the glow discharge and the arc discharge by increasing the target current density. By means of the collision kinetic energy of Ar⁺ and the Joule heating effect of electrons, the electrons and atoms could be spontaneously induced to emit by overcoming the surface work function. Thus the deposited particles with a high density, a high energy and a high ionization can be obtained. Two groups of the Ti films were deposited in glow discharge and glow-arc discharge sections respectively. The film thickness at different target-to-substrate distances was measured by the CLSM. The microstructure of films was characterized by XRD, SEM, AFM and TEM. The adhesion between the film and substrate was determined by the microscratch tester. The results showed that the Ti film deposited in the glow-arc section of gas discharge had nanocrystal size, dense structure, uniform thickness, high deposition rate and excellent adhesion.