PHASE FIELD SIMULATION ON MICROSTRUCTURE EVOLUTION AND GROWTH KINETICS OF Cu6Sn5 INTERMETALLIC COMPOUND DURING EARLY INTERFACIAL REACTION IN Sn/Cu SOLDERING SYSTEM
柯常波, 男, 1981 年生, 博士
Received date: 2013-07-16
Revised date: 2013-11-14
Online published: 2014-03-20
Supported by
Supported by National Natural Science Foundation of China (Nos.51275178 and 51205135) and Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20110172110003) and Fundamental Research Funds for the Central Universities (No.2013ZM0026)
In the continuous pursuit of miniaturization, multifunction and high-reliability of electronic products and devices, the packing density has been increasing and the dimension of solder joints has been scaling down. In electronic packaging, during the soldering process being employed to Sn-based solders, an intermetallic compound (IMC) layer is formed between molten solder and pad (or under bump metallization, UBM), whose morphology and thickness as well as growth kinetics play an important role in controlling the service performance of the solder joints, in particular for solder interconnects with the decreasing size where the interfacial IMC layer takes up a high volume fraction in the solder joint. Thus, characterizing the morphology change and growth kinetics of interfacial IMC layer is very important to optimize the soldering process and evaluate the reliability of solder interconnects. In this study, a multi-phase-field model is applied to intensively account for the effect of grain boundary diffusion coefficient (
Changbo KE , Minbo ZHOU , Xinping ZHANG . PHASE FIELD SIMULATION ON MICROSTRUCTURE EVOLUTION AND GROWTH KINETICS OF Cu6Sn5 INTERMETALLIC COMPOUND DURING EARLY INTERFACIAL REACTION IN Sn/Cu SOLDERING SYSTEM[J]. Acta Metall Sin, 2014 , 50(3) : 294 -304 . DOI: 10.3724/SP.J.1037.2013.00415
| [1] | Abtew M, Selvaduray G. Mater Sci Eng, 2000; R27: 95 |
| [2] | Yin L M, Yang Y, Liu L Q, Zhang X P. Acta Metall Sin, 2009; 45:422 |
| [2] | (尹立孟, 杨 艳, 刘亮岐, 张新平. 金属学报, 2009; 45: 422) |
| [3] | Zhou M B, Ma X, Zhang X P. J Mater Sci Mater Electron, 2012; 23: 1543 |
| [4] | Zeng K, Tu K N. Mater Sci Eng, 2002; R38: 55 |
| [5] | Zuruzi A S, Chiu C H, Lahiri S K, Tu K N. J Appl Phys, 1999; 86: 4916 |
| [6] | Deng X, Piotrowski G, Williams J J, Chawla N. J Electron Mater, 2003; 32: 1403 |
| [7] | Shen J, Chan Y C, Liu S Y. Acta Mater, 2009; 57: 5196 |
| [8] | Ma D, Wang W D, Lahiri S K. J Appl Phys, 2002; 91: 3312 |
| [9] | Chen J, Shen J, Lai S Q, Min D, Wang X C. J Alloys Compd, 2010; 489: 631 |
| [10] | Li J F, Agyakwa P A, Johnson C M. Acta Mater, 2010; 58: 3429 |
| [11] | Kim H K, Liou H K, Tu K N. Appl Phys Lett, 1995; 66: 2337 |
| [12] | Gorlich J, Schmitz G, Tu K N. Appl Phys Lett, 2005; 86: 053106-1 |
| [13] | Shin C K, Baik Y J, Huh J Y. J Electron Mater, 2001; 30: 1323 |
| [14] | Choi S, Lucas J P, Subramanian K N, Bieler T R. J Mater Sci, 2000; 11: 497 |
| [15] | Cho M G, Kim H Y, Seo S K, Lee H M. Appl Phys Lett, 2009; 95: 021905-1 |
| [16] | Gong J C, Liu C Q, Conway P P, Silberschmidt V V. Acta Mater, 2008; 56: 4291 |
| [17] | Chen J K, Beraun J E, Tzou D Y. J Mater Sci, 1999; 34: 6183 |
| [18] | Erickson K L, Hopkins P L, Vianco P T. J Electron Mater, 1998; 27: 117 |
| [19] | Huh J Y, Hong K K, Kim Y B, Kim K T. J Electron Mater, 2004; 33: 1161 |
| [20] | Hong K K, Huh J Y. J Electron Mater, 2006; 35: 56 |
| [21] | Park M S, Arroyave R. Acta Mater, 2010; 58: 4900 |
| [22] | Kim S G, Kim W T, Suzuki T, Ode M. J Cryst Growth, 2004; 261: 135 |
| [23] | Shim J H, Oh C S, Lee B J, Lee D N. Z Metallkd, 1996; 87: 1 |
| [24] | Kim S G, Kim W T, Suzuki T. Phys Rev, 1999; 60E: 7186 |
| [25] | Xu G S,Zeng J B,Zhou M B,Cao S S,Ma X,Zhang X P. In: Bi K Y, Yang D G, Cai M eds., Proceedings of the 12th International Conference on Electronic Packaging Technology & High Density Packaging, Piscataway, NJ: IEEE Press, 2012: 289 |
| [26] | Zhou M B, Ma X, Zhang X P. Acta Metall Sin, 2013; 3: 341 |
| [26] | (周敏波, 马 骁, 张新平. 金属学报, 2013; 3?: 341) |
| [27] | Ma X, Wang F J, Qian Y Y, Yoshida F. Mater Lett, 2003; 57: 3361 |
| [28] | Yu D Q, Wang L. J Alloys Compd, 2008; 458: 542 |
| [29] | Gosh G. J Appl Phys, 2000; 88: 6887 |
| [30] | Suh J O, Tu K N, Lutsenko G V, Gusal A M. Acta Mater, 2008; 56: 1075 |
| [31] | Gusak A M, Tu K N. Phys Rev, 2002; 66B: 115403-1 |
| [32] | Kim S H, Lee H J, Yu Y S, Won Y S. Acta Mater, 2009; 57: 1254 |
| [33] | Laudise R A, Carruthers J R, Jackson K A. Annu Rev Mater Sci, 1971; 1: 253 |
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